CAJ | 학술논문

第一次报道了以高温AlN为模板层的AlGaN基p-i-n背照式日光盲探测器的制作和器件特性.利用MOCVD方法在(0001)面的蓝宝石衬底上生长了探测器的AlxGa1-xN多层外延材料.在无需核化层的高温AlN模板上生长了p-i-n背照式日光盲探测器的无裂纹高Al组分(0.7)AlGaN多层外延结构.利用在线反射监测仪、三轴X射线衍射及原子力显微镜表征了外延材料的晶体质量.在1.8V的反向偏压下,制作的探测器表现出了日光盲响应特性,在270nm处最大响应度为0.0864A/W.具有约3.5V的正向开启电压,大于20V的反向击穿电压,在2V的反向偏压下暗电流小于20pA.
제일차보도료이고온AlN위모판층적AlGaN기p-i-n배조식일광맹탐측기적제작화기건특성.이용MOCVD방법재(0001)면적람보석츤저상생장료탐측기적AlxGa1-xN다층외연재료.재무수핵화층적고온AlN모판상생장료p-i-n배조식일광맹탐측기적무렬문고Al조분(0.7)AlGaN다층외연결구.이용재선반사감측의、삼축X사선연사급원자력현미경표정료외연재료적정체질량.재1.8V적반향편압하,제작적탐측기표현출료일광맹향응특성,재270nm처최대향응도위0.0864A/W.구유약3.5V적정향개계전압,대우20V적반향격천전압,재2V적반향편압하암전류소우20pA.
The growth,fabrication,and characterization of a solar-blind AlGaN-based p-i-n back-illuminated photodetector with a high temperature AlN template are reported for the first time. The photodetector was fabricated from multilayer Alx Ga1-xN films grown by MOCVD on double-polished c-plane (0001) sapphire substrates. Crack free,high Al content (0.7) AlGaN multilayer structure,designed for the solar-blind p-i-n back-illuminated photodetector,was grown on a high temperature AlN template without a nuclear layer. The high quality of the epitaxial layers is demonstrated by in-situ optical reflectance monitoring curve, triple-axis X-ray diffraction, and atomic-force microscope. At a 1.8V bias, the processed p-i-n photodetector exhibits a solar-blind photoresponse with a maximum responsivity of 0. 0864A/W at 270nm. The photodetector exhibits a forward turn-on voltage at around 3.5V and a reverse breakdown voltage above 20V,and the leakage current is below 20pA for 2V reverse bias.