半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2006年
1期
14-18
,共5页
宽带%压控振荡器%CMOS
寬帶%壓控振盪器%CMOS
관대%압공진탕기%CMOS
wideband%VCO%CMOS
实现了一个宽频带VHF频段CMOS VCO.其最大的改进在于将振荡器中交叉耦合MOS管分为并联可开关的若干段.这样使其特性可以在较大范围内补偿VCO调频过程中状态的变化.该VCO使用标准0.18μmCMOS工艺制作,核心版图面积约为550μm×700μm.测试结果表明:该VCO频率覆盖范围为31～111MHz;功耗为0.3～6.9mW;在100kHz频偏处相位噪声约-110dBc/Hz.
實現瞭一箇寬頻帶VHF頻段CMOS VCO.其最大的改進在于將振盪器中交扠耦閤MOS管分為併聯可開關的若榦段.這樣使其特性可以在較大範圍內補償VCO調頻過程中狀態的變化.該VCO使用標準0.18μmCMOS工藝製作,覈心版圖麵積約為550μm×700μm.測試結果錶明:該VCO頻率覆蓋範圍為31～111MHz;功耗為0.3～6.9mW;在100kHz頻偏處相位譟聲約-110dBc/Hz.
실현료일개관빈대VHF빈단CMOS VCO.기최대적개진재우장진탕기중교차우합MOS관분위병련가개관적약간단.저양사기특성가이재교대범위내보상VCO조빈과정중상태적변화.해VCO사용표준0.18μmCMOS공예제작,핵심판도면적약위550μm×700μm.측시결과표명:해VCO빈솔복개범위위31～111MHz;공모위0.3～6.9mW;재100kHz빈편처상위조성약-110dBc/Hz.
This paper presents a VHF CMOS VCO. The most significant improvement on the VCO is that the cross-coupled MOSFET pairs are divided into several switchable parts so the characteristics can compensate the state change that results from the frequency tuning of the oscillator. This VCO is implemented in 0.18μm CMOS with a core area of about 550μm × 700μm. The test results show that the tuning range covers 31～111MHz with a power consumption between 0.3～6.9mW and a phase noise at a 100kHz offset of about - 110dBc/Hz.
