CAJ | 학술논문

测量了生长在(311)A面GaAs衬底上的In0.55Al 0.45As/Al0.5Ga0.5As自组织量子点光致发光谱,变激发功率和压力实验证明发光峰是与X能谷相关的Ⅱ型发光峰,将它指认为从Al0.5Ga0.5As势垒X能谷到In0.55Al0.45As重空穴的Ⅱ型跃迁.高温下观察到的高能峰随压力增大向高能方向移动,认为它来源于量子点中Γ能谷与价带之间的跃迁.在压力下还观察到了一个新的与X相关的发光峰,认为它与双轴应变引起的导带X能谷劈裂有关.
측량료생장재(311)A면GaAs츤저상적In0.55Al 0.45As/Al0.5Ga0.5As자조직양자점광치발광보,변격발공솔화압력실험 증명발광봉시여X능곡상관적Ⅱ형발광봉,장타지인위종Al0.5Ga0.5As세루X능 곡도In0.55Al0.45As중공혈적Ⅱ형약천.고온하관찰도적고능봉수압력증대향 고능방향이동,인위타래원우양자점중Γ능곡여개대지간적약천.재압력하환관찰도료일개신 적여X상관적발광봉,인위타여쌍축응변인기적도대X능곡벽렬유관.
The photoluminescence (PL) spectra of self-ass embled In0.55Al0.45As/Al0.5Ga0.5As quantum dots (QD) gro wn on (311)A GaAs substrate were measured. The type-Ⅱ character of PL related to the X valley was verified by excitation power dependence of peak position a nd the PL spectra under different pressure, which was attributed to the type-Ⅱ transition from X valley in Al0.5Ga0.5As to heavy holes in In0. 55Al0.45As.The high energy Γ-related transition was also observed abov e 70K and aasigned as the transition between Γ valley and heavy holes in In 0.55Al0.45As.The X-valley split was discussed to interpret the observed second X-related peak under pressure.