CAJ | 학술논문

报道了采用热壁外延(HWE)技术，在Si表面生长GaAs薄膜。先通过活化剂活化Si表面，再采取两步生长法外延GaAs单晶薄膜，最后进行断续多层循环退火(IMCA)。经电子探针(EPMA)、Raman光谱、Hall测量和荧光(PL)光谱测试分析，证实在Si表面获得了近4μm厚的GaAs单晶薄膜。
보도료채용열벽외연(HWE)기술，재Si표면생장GaAs박막。선통과활화제활화Si표면，재채취량보생장법외연GaAs단정박막，최후진행단속다층순배퇴화(IMCA)。경전자탐침(EPMA)、Raman광보、Hall측량화형광(PL)광보측시분석，증실재Si표면획득료근4μm후적GaAs단정박막。
This paper reports the growth of GaAs layer on Si substrate by hot wall epitaxy (HWE). Si surface prior to epitaxy of GaAs layer is activated. Then two - step epitaxy is used to achieve GaAs layer. Finally, intermittent multi - layer cycle annealing (IMCA) is implemented to improve morphology and quality of the epitaxial layer. Measurement and analysis by electron probe micro - analysis (EPMA), Raman spectrum, Hall measurement and photo - luminescence (PL) confirm that GaAs layer with thickness of approximately 4 μm has been obtained.