浙江大学学报(英文版)
浙江大學學報(英文版)
절강대학학보(영문판)
JOURNAL OF ZHEJIANG UNIVERSITY SCIENCE
2003年
2期
131-135
,共5页
沈大可%SOU I.K%韩高荣%杜丕一%阙端麟
瀋大可%SOU I.K%韓高榮%杜丕一%闕耑麟
침대가%SOU I.K%한고영%두비일%궐단린
MBE(molecular beam epitaxy)%Polycrystalline ZnSxSe1-x thin film%ITO glass%Structural characterizations
MBE growth of ZnSxSe1-x thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging from 270℃ to 330℃. The XRD θ/2θ spectra resulted from these films indicated that the as-grown polycrystalline ZnSxSe1-x thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks showed strong growth temperature dependence, with the optimized temperature being about 290℃. Both AFM and TEM measurements of these thin films also indicated a similar growth temperature dependence. High quality ZnSxSe1-x thin film grown at the optimized temperature had the smoothest surface with lowest RMS value of 1.2 nm and TEM cross-sectional micrograph showing a well defined columnar structure.
