半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2001年
10期
1250-1254
,共5页
浮空场限环%高压电压探测器%分压器%探测环
浮空場限環%高壓電壓探測器%分壓器%探測環
부공장한배%고압전압탐측기%분압기%탐측배
提出一种可以集成在SPIC(智能功率集成电路)内部的高压电压探测器的方法,其理论是基于基本的结终端技术中的浮空场限环系统,把场限环系统作为表面电压分压器.在通常的场限环外侧再增加两个环,对外侧环电压再一次分压,并把最外侧环设计成高压电压探测器.这样当主结电压上升到一个高压时,最外侧的环可以只有几伏到十几伏的变化,这样环(探测器)上的信号既可以表征主结高电压,又可以由低压逻辑电路处理.以一个400V的结构为例,分析并模拟了这个结构.结果证明可以有效探测SPIC的高压并可以集成在SPIC中.同时,该结构可以与CMOS和BCD工艺兼容,且工艺上也不会增加步骤.
提齣一種可以集成在SPIC(智能功率集成電路)內部的高壓電壓探測器的方法,其理論是基于基本的結終耑技術中的浮空場限環繫統,把場限環繫統作為錶麵電壓分壓器.在通常的場限環外側再增加兩箇環,對外側環電壓再一次分壓,併把最外側環設計成高壓電壓探測器.這樣噹主結電壓上升到一箇高壓時,最外側的環可以隻有幾伏到十幾伏的變化,這樣環(探測器)上的信號既可以錶徵主結高電壓,又可以由低壓邏輯電路處理.以一箇400V的結構為例,分析併模擬瞭這箇結構.結果證明可以有效探測SPIC的高壓併可以集成在SPIC中.同時,該結構可以與CMOS和BCD工藝兼容,且工藝上也不會增加步驟.
제출일충가이집성재SPIC(지능공솔집성전로)내부적고압전압탐측기적방법,기이론시기우기본적결종단기술중적부공장한배계통,파장한배계통작위표면전압분압기.재통상적장한배외측재증가량개배,대외측배전압재일차분압,병파최외측배설계성고압전압탐측기.저양당주결전압상승도일개고압시,최외측적배가이지유궤복도십궤복적변화,저양배(탐측기)상적신호기가이표정주결고전압,우가이유저압라집전로처리.이일개400V적결구위례,분석병모의료저개결구.결과증명가이유효탐측SPIC적고압병가이집성재SPIC중.동시,해결구가이여CMOS화BCD공예겸용,차공예상야불회증가보취.
A novel high-voltage detector that can be integrated into SPIC (Smart Power IC) is proposed. The structure is designed on the basis of normal junction terminal technique of FFLR (Floating Field Limiting Rings) system. The field-limiting ring as a voltage divider,is used to optimize the surface field. The voltage of main junction increases from 0 to a high value,while the utmost ring is designed to vary within a small range,which can be handled by using low voltage logic circuits. An example of 400V rings system is analyzed and simulated for this structure. The results prove that the high voltage detector can detect high voltage in SPIC. The structure can be integrated into SPIC. Besides,it is compatible with CMOS or BCD(Bipolar CMOS Dmos) technology,without any additional processes required.