低温下应变外延层的单层生长
저온하응변외연층적단층생장
Single Layer Growth of Strained Epitaxy at Low Temperature
  • 万方数据
    半导体学报 반도체학보
    CHINESE JOURNAL OF SEMICONDUCTORS
    2003年 4期 362-365 ,共4页

    段瑞飞%王宝强%朱占平%曾一平

    단서비%왕보강%주점평%증일평

    InGaAs/GaAs%分子束外延%原子力显微镜%外延层%单层生长 InGaAs/GaAs%分子束外延%原子力顯微鏡%外延層%單層生長
    InGaAs/GaAs%분자속외연%원자력현미경%외연층%단층생장
    InGaAs/GaAs%molecular beam epitaxy%atomic force microscopy%epilayer%monolayer growth
    用接触式原子力显微镜来观察460℃低温下生长的In0.35Ga0.65As/GaAs外延层形貌.实验发现,这种460℃低温生长材料的失配外延层既不是层状的FvdM生长模式也不是岛状的SK自组织生长模式,而是由原子单层构成的梯田状大岛.原子力显微镜测试表明台阶的厚度为0.28nm,约为一个原子单层,这种介于层状和岛状生长之间的模式有助于了解失配异质外延的生长过程.
    용접촉식원자력현미경래관찰460℃저온하생장적In0.35Ga0.65As/GaAs외연층형모.실험발현,저충460℃저온생장재료적실배외연층기불시층상적FvdM생장모식야불시도상적SK자조직생장모식,이시유원자단층구성적제전상대도.원자력현미경측시표명태계적후도위0.28nm,약위일개원자단층,저충개우층상화도상생장지간적모식유조우료해실배이질외연적생장과정.
    Contacting mode atomic force microscopy (AFM) is used to measure the In0.35Ga0.65As/GaAs epilayer grown at low temperature (460℃).Unlike the normal layer-by-layer growth (FvdM mode) or self-organized islands growth (SK mode),samples grown under 460℃ are found to be large islands with atomic thick terraces.AFM measurements reveale near one monolayer high steps.This kind of growth is good between FvdM and SK growth modes and can be used to understand the evolution of strained epitaxy from FvdM to SK mode.
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