材料科学与工程学报
材料科學與工程學報
재료과학여공정학보
MATERIALS SCIENCE AND ENGINEERING
2005年
1期
74-76
,共3页
Bi4 Ti3O12%铁电薄膜%Sol-Gel法%C-V特性
Bi4 Ti3O12%鐵電薄膜%Sol-Gel法%C-V特性
Bi4 Ti3O12%철전박막%Sol-Gel법%C-V특성
Ferroelectric thin films%Bi4Ti3O12%Sol-Gel method%C-V characteristics
Bi4 Ti3O12是典型的层状钙钛矿结构铁电材料,具有优良的压电、铁电、热释电和电光等性能,可广泛应用于铁电存储器、压电和电光等器件.本文在硅衬底上利用溶胶凝胶法制备出Bi4 Ti3O12铁电薄膜,并且对其性能进行了研究.测量不同退火温度下得到的Ag/BTO/p-Si结构的C-V曲线,结果表明Bi4 Ti3O12薄膜在合适的制备工艺下可望实现极化型存储.
Bi4 Ti3O12是典型的層狀鈣鈦礦結構鐵電材料,具有優良的壓電、鐵電、熱釋電和電光等性能,可廣汎應用于鐵電存儲器、壓電和電光等器件.本文在硅襯底上利用溶膠凝膠法製備齣Bi4 Ti3O12鐵電薄膜,併且對其性能進行瞭研究.測量不同退火溫度下得到的Ag/BTO/p-Si結構的C-V麯線,結果錶明Bi4 Ti3O12薄膜在閤適的製備工藝下可望實現極化型存儲.
Bi4 Ti3O12시전형적층상개태광결구철전재료,구유우량적압전、철전、열석전화전광등성능,가엄범응용우철전존저기、압전화전광등기건.본문재규츤저상이용용효응효법제비출Bi4 Ti3O12철전박막,병차대기성능진행료연구.측량불동퇴화온도하득도적Ag/BTO/p-Si결구적C-V곡선,결과표명Bi4 Ti3O12박막재합괄적제비공예하가망실현겁화형존저.
Bismuth Titanate (Bi4Ti3 O12 ) thin films were fabricated on p-Si substrates by Sol-Gel method. The effect of annealingtemperature on physical structure and ferroelectric properties of Bi4Ti3O12 thin films has been investigated. The X-ray diffraction (XRD)results show that the single perovskite phase of Bi4 Ti3 O12 can be obtained at 600℃. This metal-ferroelectric-semiconductor structure showeda capacitor-voltage (C-V) hysteresis due to ferroelectric polarization.
