稀有金属材料与工程
稀有金屬材料與工程
희유금속재료여공정
RARE METAL MATERIALS AND ENGINEERNG
2008年
z2期
248-251
,共4页
杨祖念%安红娜%肖定全%余萍%陈连平%王辉
楊祖唸%安紅娜%肖定全%餘萍%陳連平%王輝
양조념%안홍나%초정전%여평%진련평%왕휘
电化学技术%BaMoO4%白钨矿结构%薄膜成核机理
電化學技術%BaMoO4%白鎢礦結構%薄膜成覈機理
전화학기술%BaMoO4%백오광결구%박막성핵궤리
electrochemical technique%BaMoO4%scheelite-structure:crystalline nucleation mechanism
采用恒电流电化学技术直接在金属钼片上制备了具有白钨矿结构的钼酸盐(BaMoO4)薄膜.对BaMoO4薄膜进行了SEM测试,并对相应的测试结果进行了对比和分析.研究表明,在薄膜生长初期,其生长特性具有若干显著的特点,包括:晶核和晶粒优先选择在基体缺陷处堆砌和生长;生长初期形成的晶核都具有白钨矿结构的骨架;晶核和刚开始长大生成的晶粒都是疏松的;晶粒都明显显示有蜂窝状空隙存在等.在薄膜生长的初始阶段,晶粒基本上以其c轴垂直于薄膜基体表面进行生长;随着薄膜制备时间的延长,晶粒的生长方向倾向于按其c轴在薄膜的表面内的方向进行生长.
採用恆電流電化學技術直接在金屬鉬片上製備瞭具有白鎢礦結構的鉬痠鹽(BaMoO4)薄膜.對BaMoO4薄膜進行瞭SEM測試,併對相應的測試結果進行瞭對比和分析.研究錶明,在薄膜生長初期,其生長特性具有若榦顯著的特點,包括:晶覈和晶粒優先選擇在基體缺陷處堆砌和生長;生長初期形成的晶覈都具有白鎢礦結構的骨架;晶覈和剛開始長大生成的晶粒都是疏鬆的;晶粒都明顯顯示有蜂窩狀空隙存在等.在薄膜生長的初始階段,晶粒基本上以其c軸垂直于薄膜基體錶麵進行生長;隨著薄膜製備時間的延長,晶粒的生長方嚮傾嚮于按其c軸在薄膜的錶麵內的方嚮進行生長.
채용항전류전화학기술직접재금속목편상제비료구유백오광결구적목산염(BaMoO4)박막.대BaMoO4박막진행료SEM측시,병대상응적측시결과진행료대비화분석.연구표명,재박막생장초기,기생장특성구유약간현저적특점,포괄:정핵화정립우선선택재기체결함처퇴체화생장;생장초기형성적정핵도구유백오광결구적골가;정핵화강개시장대생성적정립도시소송적;정립도명현현시유봉와상공극존재등.재박막생장적초시계단,정립기본상이기c축수직우박막기체표면진행생장;수착박막제비시간적연장,정립적생장방향경향우안기c축재박막적표면내적방향진행생장.
Barium molybdate(BaMoO4)films with scheelite-structure were prepared directly on metal molybdenum substrates by constant current electrochemical technique.The measurements of the SEM images of the films were carried out.It was found that the growth of the films at their early stages possessed several remarkable characteristics,and the nucleuses of the films piled up and grew prior the places of the substrate with more defects.The crystalline nucleuses formed have the skeleton of the scheelite-structure;the crystalline nucleuses and the crystal granules which are just growing up are all porous,and the crystalline granules have the interstices of the beehive form obviously.At the initial stage of the growth,the crystalline granule grows in the direction that its C axis is perpendicular to the surface of the substrate;and along with the extension of deposition time,the growth direction of the crystalline granule trends to its C axis being in the surface of the films.