CAJ | 학술논문

报道了发射极自对准的InP基异质结双极型晶体管.在集电极电流Ic=34.2mA的条件下,发射极面积为0.8μm×12μm的InP HBT截止频率fT为162GHz,最大振荡频率fmax为52GHz,最大直流增益为120,偏移电压为0.10V,击穿电压BVCEO达到3.8V(Ic=0.1μA).这种器件非常适合在高速低功耗方面的应用,例如OEIC接收机以及模拟数字转换器.
보도료발사겁자대준적InP기이질결쌍겁형정체관.재집전겁전류Ic=34.2mA적조건하,발사겁면적위0.8μm×12μm적InP HBT절지빈솔fT위162GHz,최대진탕빈솔fmax위52GHz,최대직류증익위120,편이전압위0.10V,격천전압BVCEO체도3.8V(Ic=0.1μA).저충기건비상괄합재고속저공모방면적응용,례여OEIC접수궤이급모의수자전환기.
An emitter self-aligned InP-based single heterojunction bipolar transistor with a cutoff frequency (fT)of 162GHz is reported. The emitter size is 0.8m × 12μm, the maximum DC gain is 120, the offset voltage is 0.10V,and the typical breakdown voltage at Ic = 0.1μA is 3.8V. This device is suitable for high-speed low-power applications,such as OEIC receivers and analog-to-digital converters.