电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2010年
1期
62-65
,共4页
QFN%回流焊%叠层超薄芯片%热应力%翘曲
QFN%迴流銲%疊層超薄芯片%熱應力%翹麯
QFN%회류한%첩층초박심편%열응력%교곡
QFN%reflow soldering%stacked ultra-thin chip%thermal stress%warpage
采用通用有限元软件MSC.Marc,模拟分析了一种典型的多层超薄芯片叠层封装器件在经历回流焊载荷后的热应力及翘曲分布情况,研究了部分零件厚度变化对器件中叠层超薄芯片翘曲、热应力的影响.结果表明:在整个封装体中,热应力最大值(116.2 MPa)出现在最底层无源超薄芯片上,结构翘曲最大值(0.028 26 mm)发生于模塑封上部边角处.适当增大模塑封或底层无源芯片的厚度或减小底充胶的厚度可以减小叠层超薄芯片组的翘曲值;适当增大底层无源超薄芯片的厚度(例如0.01 mm),可以明显减小其本身的应力值10 MPa以上.
採用通用有限元軟件MSC.Marc,模擬分析瞭一種典型的多層超薄芯片疊層封裝器件在經歷迴流銲載荷後的熱應力及翹麯分佈情況,研究瞭部分零件厚度變化對器件中疊層超薄芯片翹麯、熱應力的影響.結果錶明:在整箇封裝體中,熱應力最大值(116.2 MPa)齣現在最底層無源超薄芯片上,結構翹麯最大值(0.028 26 mm)髮生于模塑封上部邊角處.適噹增大模塑封或底層無源芯片的厚度或減小底充膠的厚度可以減小疊層超薄芯片組的翹麯值;適噹增大底層無源超薄芯片的厚度(例如0.01 mm),可以明顯減小其本身的應力值10 MPa以上.
채용통용유한원연건MSC.Marc,모의분석료일충전형적다층초박심편첩층봉장기건재경력회류한재하후적열응력급교곡분포정황,연구료부분령건후도변화대기건중첩층초박심편교곡、열응력적영향.결과표명:재정개봉장체중,열응력최대치(116.2 MPa)출현재최저층무원초박심편상,결구교곡최대치(0.028 26 mm)발생우모소봉상부변각처.괄당증대모소봉혹저층무원심편적후도혹감소저충효적후도가이감소첩층초박심편조적교곡치;괄당증대저층무원초박심편적후도(례여0.01 mm),가이명현감소기본신적응력치10 MPa이상.
The distribution of thermal stress and warpage in one typical kind of ultrathin chip stacking package device,which has been subjected to reflow soldering,was simulated and analyzed using a common finite element software MSC.Marc.The effects of thickness variation of some components on the thermal stress and warpage of stacked ultra-thin chip within the device were studied.The results show that,in the package device,the maximum thermal stress (116.2 MPa) appears at the bottom passive chip,while the largest warpage (0.028 26 mm) appears in the upper corner of EMC (epoxy molding compound).Appropriately increasing the thickness of EMC or bottom passive chip or decreasing the thickness of interlayer adhesive reduces the warpage of stacked ultra-thin chip.When the thickness of bottom passive chip is increased appropriately (say 0.01 mm),its thermal stress is reduced markedly by 10 MPa or more.