电子工业专用设备
電子工業專用設備
전자공업전용설비
EQUIPMENT FOR ELECTRONIC PRODUCTS MANUFACTURING
2004年
6期
63-66
,共4页
氮化硅剥离%刻蚀速度%磷酸
氮化硅剝離%刻蝕速度%燐痠
담화규박리%각식속도%린산
Nitride Strip%Etch Rate%Phosphoric Acid
对氮化硅阻挡层或ARC层的去除通常使用在高温磷酸溶液中选择性氮化硅刻蚀.简要地阐述氮化硅刻蚀的工艺特性,及对氮化硅刻蚀后氧化硅厚度的控制提出一点见解.
對氮化硅阻擋層或ARC層的去除通常使用在高溫燐痠溶液中選擇性氮化硅刻蝕.簡要地闡述氮化硅刻蝕的工藝特性,及對氮化硅刻蝕後氧化硅厚度的控製提齣一點見解.
대담화규조당층혹ARC층적거제통상사용재고온린산용액중선택성담화규각식.간요지천술담화규각식적공예특성,급대담화규각식후양화규후도적공제제출일점견해.
Selective Silicon nitride etching in phosphoric acid is routinely used for the removal of nitride mask layers after well and active area formation or ARC layers. This paper briefly overview the characteristic of nitride strip process, and provide the recommendation for better oxide thickness control after nitride strip.
