CAJ | 학술논문

利用悬浮床,以Si粉为原料,在0.2 L/min的高纯氮气中,维持反应温度1～600 ℃,悬浮反应30 min,在预先放置的收集器上得到了SiC纳米线,XRD结果表明所得SiC纳米线为部分结晶状态,结晶态晶型为六方6H型.SEM形貌观察结果表明,所得SiC为纳米线.进一步SEM观察发现,大量纳米线的端部有球状液滴存在,VLS机制为该纳米线的主要形成机制, 通过EDX能谱对比分析,纳米线端部球状液滴中相对纳米线本身含有较多的氧元素,因此,氧元素对于通过VLS机制形成SiC纳米线起到了促进作用.TEM观察显示,纳米线中存在大量的堆垛层错缺陷.
이용현부상,이Si분위원료,재0.2 L/min적고순담기중,유지반응온도1～600 ℃,현부반응30 min,재예선방치적수집기상득도료SiC납미선,XRD결과표명소득SiC납미선위부분결정상태,결정태정형위륙방6H형.SEM형모관찰결과표명,소득SiC위납미선.진일보SEM관찰발현,대량납미선적단부유구상액적존재,VLS궤제위해납미선적주요형성궤제, 통과EDX능보대비분석,납미선단부구상액적중상대납미선본신함유교다적양원소,인차,양원소대우통과VLS궤제형성SiC납미선기도료촉진작용.TEM관찰현시,납미선중존재대량적퇴타층착결함.
Element Si was employed to synthesize SiC nanowire at a high purity nitrogen flow of 0.2 L/min in a fluidized bed. The temperature of the reaction was maintained at 1600 ℃ for 30 min. SiC nanowire could be obtained at the bottom of receiver. XRD analysis results revealed that the crystal type of as-received products were 6H type. SEM observation showed that the diameter of the nanowire was about 20～40 nm and the aspect ratio was conducted to be over than 1×10~3. SEM image also revealed the formation mechanism of the nanowire, from which VLS mechanism could be proposed. Comparing the EDX spectra, droplets at the top of nanowires had more O element than nanowires themselves. Therefore O element promoted the formation of SiC nanowires by VLS mechanism. TEM observation showed that there was much stacking fault in nanowires.