Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN
  • 万方数据
    中国科学E辑(英文版) 중국과학E집(영문판)
    SCIENCE IN CHINA(SCIENTIA SINICA)
    2003年 6期 620-626 ,共7页

    陈俊%张书明%张宝顺%朱建军%冯淦%段俐宏%王玉田%杨辉%郑文琛

    진준%장서명%장보순%주건군%풍감%단리굉%왕옥전%양휘%정문침



    gallium nitride%MOCVD%in situ laser reflectometry


    The influence of growth pressure of GaN buffer layer on the properties of MOCVD GaN on α-Al2O3 has been investigated with the aid of a home-made in situ laser reflectometry measurement system. The results obtained with in situ measurements and scanning electron microscope show that with the increase in deposition pressure of buffer layer, the nuclei increase in size, which roughens the surface, and delays the coalescence of GaN nuclei. The optical and crystalline quality of GaN epilayer was improved when buffer layer was deposited at high pressure.
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