CAJ | 학술논문

对用电子能量为1.7,0.5和0.4MeV的电子辐照和中子辐照后的n型6H-SiC样品进行低温光致发光研究.对于Ee≥0.5MeV电子辐照和中子辐照后的样品,首次发现了位于478.6/483.3/486.1n m的S1/S2/S3谱线.对样品进行热退火研究表明S1/S2/S3谱线在500℃下消失,而退火温度高于700℃时D1中心出现.考虑到产生C空位和Si空位所需的位移阈能以及热退火行为,说明S1/S2/S3为初级Si空位初级缺陷,而D1中心为二次缺陷.
대용전자능량위1.7,0.5화0.4MeV적전자복조화중자복조후적n형6H-SiC양품진행저온광치발광연구.대우Ee≥0.5MeV전자복조화중자복조후적양품,수차발현료위우478.6/483.3/486.1n m적S1/S2/S3보선.대양품진행열퇴화연구표명S1/S2/S3보선재500℃하소실,이퇴화온도고우700℃시D1중심출현.고필도산생C공위화Si공위소수적위이역능이급열퇴화행위,설명S1/S2/S3위초급Si공위초급결함,이D1중심위이차결함.
n-type 6H-SiC materials irradiated with electrons having energies of Ee = 1.7,0.5, and 0.4MeV and neutrons are studied via low temperature photoluminescence. For Ee ≥0.5MeV electron-irradiated and neutron-irradiated samples, the LTPL emission lines S1/S2/S3 at 478. 6/483.3/486. 1nm are observed for the first time. Thermal annealing studies show that the defects S1/S2/S3 disappear at 500℃. However, the well-known D1-center is only detected for annealing temperatures over 700℃. By considering the threshold displacement energies of Emin (C) and Emin (Si) and thermal annealing behavior,it is found that the defects S1/S2/S3 are a set of silicon-related primary defects and the D1-center is a kind of secondary defect.