CAJ | 학술논문

本文用ANSYS有限元热分析软件模拟了基于AlN膜钝化层和SiO2膜钝化层的高功率垂直腔面发射半导体激光器(VCSEL)器件内部的热场分布和热矢量分布.目的是证明AlN膜钝化层要比SiO2膜钝化层有具更好的特性,使器件能更稳定的工作,提高器件的特性,经模拟得到基于AlN膜钝化层的VCSEL热阻为3.12 ℃/W,而基于SiO2膜钝化层的VCSEL的热阻为4.77 ℃/W.经实验测得基于AlN膜钝化层的VCSEL热阻为3.59 ℃/W而基于SiO2膜钝化层的VCSEL的热阻为4.82 ℃/W,模拟结果和实验结果吻合较好.说明AlN膜钝化层要比SiO2膜钝化层具有更好的热特性.
본문용ANSYS유한원열분석연건모의료기우AlN막둔화층화SiO2막둔화층적고공솔수직강면발사반도체격광기(VCSEL)기건내부적열장분포화열시량분포.목적시증명AlN막둔화층요비SiO2막둔화층유구경호적특성,사기건능경은정적공작,제고기건적특성,경모의득도기우AlN막둔화층적VCSEL열조위3.12 ℃/W,이기우SiO2막둔화층적VCSEL적열조위4.77 ℃/W.경실험측득기우AlN막둔화층적VCSEL열조위3.59 ℃/W이기우SiO2막둔화층적VCSEL적열조위4.82 ℃/W,모의결과화실험결과문합교호.설명AlN막둔화층요비SiO2막둔화층구유경호적열특성.
In this paper,the internal thermal field and heat flow vector distributions of high power vertical-cavity surface-emitting semiconductor lasers (VCSELs),which is based on AlN film and SiO2 film passivation layers,were analyzed using ANSYS finite-element software.The simulation results proved that the AlN film passivation layer has better features than the SiO2 film passivation layers,and can make the device work in a more stable status,which also improves the device characteristics.Through the simulation,it was found that the Rthjc of VCSEL in AlN film was 3.12 K/W and the Rthjc of VCSEL in SiO2 film was 4.77 K/W.Comparison with the experimental values that the AlN film of 3.59 K/W and the SiO2 film of 4.82 K/W shows that simulation results are in good agreement with the experimental results.The proposed research works prove that the AlN film passivation layer has better thermal features than SiO2 film passivation layer.