CAJ | 학술논문

本文对典型的MEMS结构在运动过程中产生和辐射电磁波的机理以及产生的效应进行了研究.基于对MEMS结构的机械、电与电磁的耦合机制的研究,分析了MEMS结构运动过程中产生电磁波的机理.MEMS结构的相对运动以及基板上所携带电荷的运动都可以产生电磁波.在距离电磁波源1 cm处,MEMS结构辐射出的电磁波的频率为100 kHz;当MEMS结构间距为1.5 μm,辐射出的电磁波的电场强度为0.45 V/m.产生的电磁波的频率与幅度受到距离,结构运动的频率以及具体形状的影响.本文还考虑了辐射出的电磁波对同一个芯片上其他器件的影响.
본문대전형적MEMS결구재운동과정중산생화복사전자파적궤리이급산생적효응진행료연구.기우대MEMS결구적궤계、전여전자적우합궤제적연구,분석료MEMS결구운동과정중산생전자파적궤리.MEMS결구적상대운동이급기판상소휴대전하적운동도가이산생전자파.재거리전자파원1 cm처,MEMS결구복사출적전자파적빈솔위100 kHz;당MEMS결구간거위1.5 μm,복사출적전자파적전장강도위0.45 V/m.산생적전자파적빈솔여폭도수도거리,결구운동적빈솔이급구체형상적영향.본문환고필료복사출적전자파대동일개심편상기타기건적영향.
Abstract:Moving structures of MEMS devices can generate and radiate E-M wave.Based on the coupling physics between mechanical,electrical and E-M energy domain,the principles to produce E-M wave have been analyzed,the movement between two MEMS electrostatic structures and the moving charges on the motional MEMS structure.With the distance away from the E-M source is 1cm,the frequency is 100kHz and the gap between the MEMS structure is 1.5μm,the intensity of E-field is 0.45V/m.The E-M wave is influenced by the distance,frequency and the structure of the moving MEMS devices.The influence of the E-M wave to other devices within a chip is also considered.