CAJ | 학술논문

合成了一个新配合物EuL3phen,[HL=4,4,4-三氟-1-(4'-邻三联苯基)-1,3-丁二酮,phen=邻菲咯咻].该化合物在半导体InGaN芯片发出的近紫外光激发下能够发出铕㈢离子特征红光,发光量子效率为9%.将配合物EuL3phen和半导体395 nm发射InGaN芯片组合,成功地制备了红色发光二极管.在配合物和硅胶质量比为1:25时,器件色坐标为x=0.6123,y=0.3128,光效为0.68 Im·W-1.
합성료일개신배합물EuL3phen,[HL=4,4,4-삼불-1-(4'-린삼련분기)-1,3-정이동,phen=린비각휴].해화합물재반도체InGaN심편발출적근자외광격발하능구발출유㈢리자특정홍광,발광양자효솔위9%.장배합물EuL3phen화반도체395 nm발사InGaN심편조합,성공지제비료홍색발광이겁관.재배합물화규효질량비위1:25시,기건색좌표위x=0.6123,y=0.3128,광효위0.68 Im·W-1.
A new europium(Ⅲ) complex, EuL3phen, [HL=4, 4,4-trifluoro-1-(4'-o-terphenyl)-1, 3-butanedione, phen= 1, 10-phenanthroline] was synthesized. The complex shows red emission of Eu3+ ions under near ultraviolet (NUV) InGaN chip emission light with a quantum yield of 9%. Red luminescent LEDs were fabricated by assembly of EuL3phen and 395 nm-emitting InGaN chips. When the mass ratio of the complex to the silicone is 1:25, the chromaticity coordinates is x=0.6113, y=0.3125, and the efficiency of the fabricated LED with the europium complex achieves 0.68 lm·W-1.