半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2006年
4期
679-682
,共4页
刘峰奇%郭瑜%李路%邵晔%刘俊岐%路秀真%王占国
劉峰奇%郭瑜%李路%邵曄%劉俊岐%路秀真%王佔國
류봉기%곽유%리로%소엽%류준기%로수진%왕점국
应变补偿量子级联激光器%短腔长%单模激射
應變補償量子級聯激光器%短腔長%單模激射
응변보상양자급련격광기%단강장%단모격사
strain-compensated quantum cascade lasers%short cavity length%single mode emission
报道了激射波长为5.4和7.84μm的应变补偿In1-xGaxAs/In1-yAlyAs量子级联激光器的单模激射.以高质量的应变补偿量子级联激光器材料为支撑,通过减小FP腔长,开辟实现单模器件的新途径.首次实现阈值电流仅为50mA、腔长为145μm的激射波长在λ≈5.4μm的单模激射和阈值电流仅为80mA、腔长为170μm的激射波长在λ≈7.84μm的单模激射.这是目前InGaAs/InAlAs材料体系最短腔长的边发射量子级联激光器.
報道瞭激射波長為5.4和7.84μm的應變補償In1-xGaxAs/In1-yAlyAs量子級聯激光器的單模激射.以高質量的應變補償量子級聯激光器材料為支撐,通過減小FP腔長,開闢實現單模器件的新途徑.首次實現閾值電流僅為50mA、腔長為145μm的激射波長在λ≈5.4μm的單模激射和閾值電流僅為80mA、腔長為170μm的激射波長在λ≈7.84μm的單模激射.這是目前InGaAs/InAlAs材料體繫最短腔長的邊髮射量子級聯激光器.
보도료격사파장위5.4화7.84μm적응변보상In1-xGaxAs/In1-yAlyAs양자급련격광기적단모격사.이고질량적응변보상양자급련격광기재료위지탱,통과감소FP강장,개벽실현단모기건적신도경.수차실현역치전류부위50mA、강장위145μm적격사파장재λ≈5.4μm적단모격사화역치전류부위80mA、강장위170μm적격사파장재λ≈7.84μm적단모격사.저시목전InGaAs/InAlAs재료체계최단강장적변발사양자급련격광기.
Single mode operation of strain-compensated In1-x Gax As/In1-y AlyAs quantum cascade lasers emitting at λ≈5. 4 and 8μm is realized by shortening the Fabry-Perot cavity length. Accurate control of growth parameters and strain balance results in a perfect lattice match and thus in excellent material quality. Single mode emission with a side mode suppression ratio greater than 20dB for uncoated lasers is realized. Record low threshold currents of 50 and 80mA and record short cavity lengths of 145 and 170μm are achieved for λ≈5. 4μm and λ≈7. 84μm devices, respectively, in pulsed mode.