材料导报
材料導報
재료도보
MATERIALS REVIEW
2009年
22期
87-89
,共3页
刘汉法%张化福%袁玉珍%袁长坤
劉漢法%張化福%袁玉珍%袁長坤
류한법%장화복%원옥진%원장곤
ZnO:Ti%透明导电薄膜%溅射功率%磁控溅射
ZnO:Ti%透明導電薄膜%濺射功率%磁控濺射
ZnO:Ti%투명도전박막%천사공솔%자공천사
titanium-doped zinc oxide films%transparent conducting films%sputtering power%magnetron sputtering
采用直流磁控溅射法在室温水冷玻璃衬底上制备出高质量的掺钛氧化锌(ZnO:Ti)透明导电薄膜,研究了溅射功率对ZnO:Ti薄膜结构、形貌和光电性能的影响,结果表明,溅射功率对ZnO:Ti薄膜的结构和电阻率有显著影响.XRD表明,ZnO:Ti薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向.当溅射功率为130W时,实验制备的ZnO:Ti薄膜的电阻率具有最小值9.67×10~(-5)Ω·cm.实验制备的ZnO:Ti薄膜具有良好的附着性能,可见光区平均透过率超过91%.ZnO:Ti薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极.
採用直流磁控濺射法在室溫水冷玻璃襯底上製備齣高質量的摻鈦氧化鋅(ZnO:Ti)透明導電薄膜,研究瞭濺射功率對ZnO:Ti薄膜結構、形貌和光電性能的影響,結果錶明,濺射功率對ZnO:Ti薄膜的結構和電阻率有顯著影響.XRD錶明,ZnO:Ti薄膜為六角纖鋅礦結構的多晶薄膜,且具有c軸擇優取嚮.噹濺射功率為130W時,實驗製備的ZnO:Ti薄膜的電阻率具有最小值9.67×10~(-5)Ω·cm.實驗製備的ZnO:Ti薄膜具有良好的附著性能,可見光區平均透過率超過91%.ZnO:Ti薄膜可以用作薄膜太暘能電池和液晶顯示器的透明電極.
채용직류자공천사법재실온수랭파리츤저상제비출고질량적참태양화자(ZnO:Ti)투명도전박막,연구료천사공솔대ZnO:Ti박막결구、형모화광전성능적영향,결과표명,천사공솔대ZnO:Ti박막적결구화전조솔유현저영향.XRD표명,ZnO:Ti박막위륙각섬자광결구적다정박막,차구유c축택우취향.당천사공솔위130W시,실험제비적ZnO:Ti박막적전조솔구유최소치9.67×10~(-5)Ω·cm.실험제비적ZnO:Ti박막구유량호적부착성능,가견광구평균투과솔초과91%.ZnO:Ti박막가이용작박막태양능전지화액정현시기적투명전겁.
Transparent conducting titanium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by DC magnetron sputtering at room temperature. Micro-structural, optical and electrical properties of ZnO:Ti films are investigated. The results indicate that the sputtering power plays an important role in the microstructure and electrical resistivity of ZnO:Ti films. XRD patterns show that the ZnO :Ti films have the structure of hexagonal wurtzite with c-axis preferred orientation. When the sputtering power is 130W, it is obtained that the lowest resistivity is 9.67×10~(-5)Ω·cm. All the films present a high transmittance of above 91 in the visible range. ZnO:Ti films with high transparency and relatively low resistivity deposited at room temperature will be used as transparent electrode in thin film solar cells and liquid crystal display.