CAJ | 학술논문

采用传统固相反应法制备了不同SiO_2掺量的CaCu_3Ti_4O_(12)(CCTO) 陶瓷材料,并研究了SiO_2含量对CCTO陶瓷物相结构、微观形貌及介电性能的影响.结果表明:高温烧结时,SiO_2不会与CCTO发生固相反应,而作为第二相物质存在于CCTO陶瓷的晶界,并对CCTO陶瓷的微观结构产生不同程度的影响.CCTO陶瓷的介电常数和介电损耗随SiO_2含量的增多而相应减小.阻抗分析表明,CCTO陶瓷的晶粒电阻随SiO_2的掺入略有改变,而晶界电阻则随SiO_2的掺入而显著增大.分析认为,晶界电阻的增大是导致CCTO陶瓷介电损耗降低的主要原因.
채용전통고상반응법제비료불동SiO_2참량적CaCu_3Ti_4O_(12)(CCTO) 도자재료,병연구료SiO_2함량대CCTO도자물상결구、미관형모급개전성능적영향.결과표명:고온소결시,SiO_2불회여CCTO발생고상반응,이작위제이상물질존재우CCTO도자적정계,병대CCTO도자적미관결구산생불동정도적영향.CCTO도자적개전상수화개전손모수SiO_2함량적증다이상응감소.조항분석표명,CCTO도자적정립전조수SiO_2적참입략유개변,이정계전조칙수SiO_2적참입이현저증대.분석인위,정계전조적증대시도치CCTO도자개전손모강저적주요원인.
CaCu_3Ti_4O_(12) (CCTO) ceramics with the addition of SiO_2 were fabricated by the conventional solid-state reaction method. The phase structure, microstructure and the dielectric properties of the CCTO ceramics with different weight percentages of SiO_2 were investigated. There was no solid-state reaction between CCTO and SiO_2 at the sintering temperature, and the SiO_2 additives were observed to be present at the CCTO grain boundaries. It was found that the addition of SiO_2 influenced the microstructure and dielectric properties of the CCTO ceramics. The dielectric constant and loss tangent decreased with the increasing content of SiO_2. Impedance spectroscopy showed that the grain boundary resistance increased due to the addition of SiO_2 to CCTO, which should be main reason for the decrease in the loss tangent of the CCTO ceramics.