1.3 m m InGaAsN/ GaAs Lasers Grown by MOCVD Using TBAs and DMHy Sources
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    光学学报 광학학보
    ACTA OPTICA SINICA
    2003年 z1期 325-326 ,共2页





    We have demonstrated InGaAsN/ GaAs single quantum well (SQW) lasers grown by MOCVD using TBAs and DMHy sources. For un-buffer-strained InGaAsN/ GaAs system, our SQW lasers of 1.3 m m range is among the best in terms of transparency and threshold current density.
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