半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2004年
11期
1360-1363
,共4页
安俊明%李健%郜定山%夏君磊%李建光%王红杰%胡雄伟
安俊明%李健%郜定山%夏君磊%李建光%王紅傑%鬍雄偉
안준명%리건%고정산%하군뢰%리건광%왕홍걸%호웅위
硅基二氧化硅%阵列波导光栅%应力%双折射%偏振相关波长%数值分析
硅基二氧化硅%陣列波導光柵%應力%雙摺射%偏振相關波長%數值分析
규기이양화규%진렬파도광책%응력%쌍절사%편진상관파장%수치분석
silica on silicon%arrayed waveguide grating%stress%birefringence%polarization dependent wavelength%numerical analysis
以深刻蚀和热氧化工艺为基础,提出了一种新的阵列波导光栅(AWG)制备技术.这一工艺可使AWG中的波导侧向留有一硅层.采用有限元法和有限差分束传播法分别计算了存在这一硅层时的波导应力分布和有效折射率.结果表明由于这一侧向硅层的存在,使AWG中波导在水平和垂直方向的应力趋于一致,AWG的偏振相关波长明显减小.
以深刻蝕和熱氧化工藝為基礎,提齣瞭一種新的陣列波導光柵(AWG)製備技術.這一工藝可使AWG中的波導側嚮留有一硅層.採用有限元法和有限差分束傳播法分彆計算瞭存在這一硅層時的波導應力分佈和有效摺射率.結果錶明由于這一側嚮硅層的存在,使AWG中波導在水平和垂直方嚮的應力趨于一緻,AWG的偏振相關波長明顯減小.
이심각식화열양화공예위기출,제출료일충신적진렬파도광책(AWG)제비기술.저일공예가사AWG중적파도측향류유일규층.채용유한원법화유한차분속전파법분별계산료존재저일규층시적파도응력분포화유효절사솔.결과표명유우저일측향규층적존재,사AWG중파도재수평화수직방향적응력추우일치,AWG적편진상관파장명현감소.
A new technology for fabrication of silica on silicon arrayed waveguide grating (AWG) based on deep etching and thermal oxidation is presented.Using this method,a silicon layer is remained at the side of waveguide.The stress distribution and effective refractive index of waveguide fabricated by this approach are calculated using finite element and finite difference beam propagation method,respectively.The results of these studies indicate that the stress of silica on silicon optical waveguide can be matched in parallel and vertical direction and AWG polarization dependent wavelength (PDλ) can be reduced effectively due to side-silicon layer.