半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2005年
3期
476-479
,共4页
马杰慧%方高瞻%蓝永生%马骁宇
馬傑慧%方高瞻%藍永生%馬驍宇
마걸혜%방고첨%람영생%마효우
微通道%单片集成%AIN
微通道%單片集成%AIN
미통도%단편집성%AIN
microchannel%monolithic%AIN
介绍了一种应用于大功率激光二极管列阵的新型单片集成微通道制冷热沉.这种热沉已制造并经过测试.10叠层的激光二极管列阵的热阻为0.121℃/W.相邻两个激光条的间距是1.17mm.在20%高占空比条件下,波长为808nm左右,峰值功率可以达到611W.
介紹瞭一種應用于大功率激光二極管列陣的新型單片集成微通道製冷熱沉.這種熱沉已製造併經過測試.10疊層的激光二極管列陣的熱阻為0.121℃/W.相鄰兩箇激光條的間距是1.17mm.在20%高佔空比條件下,波長為808nm左右,峰值功率可以達到611W.
개소료일충응용우대공솔격광이겁관렬진적신형단편집성미통도제랭열침.저충열침이제조병경과측시.10첩층적격광이겁관렬진적열조위0.121℃/W.상린량개격광조적간거시1.17mm.재20%고점공비조건하,파장위808nm좌우,봉치공솔가이체도611W.
A novel AIN monolithic microchannel cooled heatsink for high power laser diode array is introduced.The high power stack laser diode array with an AIN monolithic microchannel heatsink is fabricated and tested.The thermal impedance of a 10 stack laser diode array is 0.121℃/W.The pitch between two adjacent bars is 1.17mm.The power level of 611W is achieved under the 20% duty factor condition at an emission wavelength around 808nm.