CAJ | 학술논문

利用质量分离的低能双离子束外延技术,得到了(Ga,Mn,As) 化合物.衬底温度 523K 条件下生长的样品的俄歇电子谱表明,一部分锰淀积在 GaAs 的表面形成一层厚度约为 30 nm 的外延层,另一部分锰离子成功注入到 GaAs 基底里,注入深度约为 160 nm.衬底温度为 523K 时获得了 Ga5.2Mn 相,衬底温度为 673K 时获得了 Ga5.2Mn、Ga5Mn8 和 Mn3Ga 相.在 1113K 条件下对 673K 生长的样品进行退火,退火后样品中原有的 Mn3Ga 消失,Ga5Mn8 峰减弱趋于消失,Ga5.2Mn 仍然存在而且结晶更好,并出现 Mn2As 新相.
이용질량분리적저능쌍리자속외연기술,득도료(Ga,Mn,As) 화합물.츤저온도 523K 조건하생장적양품적아헐전자보표명,일부분맹정적재 GaAs 적표면형성일층후도약위 30 nm 적외연층,령일부분맹리자성공주입도 GaAs 기저리,주입심도약위 160 nm.츤저온도위 523K 시획득료 Ga5.2Mn 상,츤저온도위 673K 시획득료 Ga5.2Mn、Ga5Mn8 화 Mn3Ga 상.재 1113K 조건하대 673K 생장적양품진행퇴화,퇴화후양품중원유적 Mn3Ga 소실,Ga5Mn8 봉감약추우소실,Ga5.2Mn 잉연존재이차결정경호,병출현 Mn2As 신상.
By mass-analyzed low energy dual-ion beam epitaxy technique, the (Ga,Mn,As) compounds were obtained. Auger electron spectroscopy spectra of the sample grown at 523K show that some of Mn ions deposited on single-crystal GaAs substrate form a 30nm thick epilayer, and the other Mn ions successfully implant into GaAs substrate and the depth of implantation is 160 nm. Ga5.2Mn is obtained at the substate temperature of 523K. Ga5.2Mn,Ga5Mn8 and Mn3Ga is obtained at the substrate temperature of 673K. The sample grown at 673K is annealed at 1113K. In this annealed sample Mn3Ga disappear, Ga5Mn8 tended to disappear, Ga5.2Mn crystallize better and new phase of Mn5.2As is generated.