半导体激光器的M2因子可以小于1
반도체격광기적M2인자가이소우1
THE BEAM QUALITY FACTOR M2 OF SEMICONDUCTOR LASERS COULD BE LESS THAN 1
  • 万方数据
    光子学报 광자학보
    ACTA PHOTONICA SINICA
    2001年 3期 381-385 ,共5页

    徐锦心%赵道木%周国泉%王绍民

    서금심%조도목%주국천%왕소민

    双异质结半导体激光器%非傍轴矢量矩理论%光束质量因子 雙異質結半導體激光器%非傍軸矢量矩理論%光束質量因子
    쌍이질결반도체격광기%비방축시량구이론%광속질량인자
    根据Porras的非傍轴矢量矩理论，对双异质结半导体激光器的光束质量进行了研究.结果表明，在有源层厚度da远小于波长λ的条件下，半导体激光器的M2因子可以小于1，并且没有下限.
    근거Porras적비방축시량구이론，대쌍이질결반도체격광기적광속질량진행료연구.결과표명，재유원층후도da원소우파장λ적조건하，반도체격광기적M2인자가이소우1，병차몰유하한.
    The beam quality of double-heterostructure injection lasers was studied based on non-paraxial vectorial moment theory developed by Porras.Some results we obtained after a series of calculation are different from conventional recognition on beam quality of semiconductor laser.It is also found its M2 factor could be less than 1 and has no lower bound for the active layer thickness da far less than wavelength λ
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