CAJ | 학술논문

用小角X射线衍射方法对Si/Co多层膜进行了测试研究，应用衍射理论对测试中出现的周期数不多的强峰和其间的一系列次强峰进行了分析，在计算多层和单层膜厚度时，提出利用相邻两个衍射峰的角度之差来消除系统误差和定位误差的简便方法，使数据处理得到简化.最后，通过XPS分析指出，在膜层界面具有硅的化合物存在.
용소각X사선연사방법대Si/Co다층막진행료측시연구，응용연사이론대측시중출현적주기수불다적강봉화기간적일계렬차강봉진행료분석，재계산다층화단층막후도시，제출이용상린량개연사봉적각도지차래소제계통오차화정위오차적간편방법，사수거처리득도간화.최후，통과XPS분석지출，재막층계면구유규적화합물존재.
small-angle x-ray diffraction study on Si/Co multilayer thin films has been undertaken . The big diffraction peaks of multilayer thin films with a less number of periods and a numbers of satellite peaks between the big peaks has been analyzed bydiffraction theory. For calculating the thickness of multilayer and single layer films,a simple method with angles-difference of adjacent peaks was presented,which reduced system error and located deviation and made data process simple. Also, The chemical state in Si/Co interface was analyzed by XPS . The results showed that therewere silicide there.