CAJ | 학술논문

利用各向异性的湿法刻蚀和侧墙隔离技术实现了发射极金属和基极金属的自对准，采用该自对准技术成功地研制出了自对准结构的AlGaAs/GaAs异质结双极晶体管，器件直流电流增益大于20，电流增益截止频率fT大于30GHz，最高振荡频率fmax大于50GHz，连续波功率测量表明：在1dB增益压缩时，单指HBT可以提供100mW输出功率，对应的功率密度为6.67W/mm，功率饱和时最大输出功率112mW,对应功率密度为7.48W/mm，功率附加效率为67%．
이용각향이성적습법각식화측장격리기술실현료발사겁금속화기겁금속적자대준，채용해자대준기술성공지연제출료자대준결구적AlGaAs/GaAs이질결쌍겁정체관，기건직류전류증익대우20，전류증익절지빈솔fT대우30GHz，최고진탕빈솔fmax대우50GHz，련속파공솔측량표명：재1dB증익압축시，단지HBT가이제공100mW수출공솔，대응적공솔밀도위6.67W/mm，공솔포화시최대수출공솔112mW,대응공솔밀도위7.48W/mm，공솔부가효솔위67%．
A self-aligned technology has been developed and applied toAlGaAs/GaAs heterojunction bipolar transistors using wet-etch and sidewall techniques.The DC current gain is more than 20,the current gain cutoff frequency,fT,is more than 30GHz and the maximum oscillation frequency,fmax,is more than 50GHz.The CW power measurements show that output power of 100mW(output power density:6.67mW/mm)with power-added efficiency(PAE)of 61.4% at 1dB gain compression has been achieved from a single finger HBT and that output power of 112mW(output power density:7.48mW/mm)with PAE of 67% can be achieved at the power saturated point.