CAJ | 학술논문

采用常规方法和分步注入法制备SOI-SIMNI(Silicon on Insulator-Separation by Implantation of Nitrogen)薄膜材料.用液氦低温霍耳效应进行了分析测量.测量结果表明：分步注入法制备得到的样品具有低的薄层电阻R□和较高的载流子迁移率.实验证明用分步注入法可以明显改善SIMNI薄膜材料的电学性能.对实验结果和机理进行了解释.
채용상규방법화분보주입법제비SOI-SIMNI(Silicon on Insulator-Separation by Implantation of Nitrogen)박막재료.용액양저온곽이효응진행료분석측량.측량결과표명：분보주입법제비득도적양품구유저적박층전조R□화교고적재류자천이솔.실험증명용분보주입법가이명현개선SIMNI박막재료적전학성능.대실험결과화궤리진행료해석.
SOI-SIMNI (Silicon On Insulator-Separation by Implanted Nitrogen) films were formed by standard and multiple-step implantation methods.The Hall-effects measurements (4-300K) show that the multiple-step implanted SIMNI films have a lower sheet resistance and higher carrier mobility than those in standard SIMNI films.The DLTS results indicated that there is a deep level defects Et=0.152 eV in the standard SIMNI films,and no deep level defects in the multiple-step implanted SIMNI films,which have good electrical properties.