CAJ | 학술논문

利用LPCVD SiO2和多晶硅作牺牲层和悬臂梁技术,解决了多晶硅应力释放问题以及微机械开关工艺与IC工艺兼容技术问题,获得了淀积弱张应力的多晶硅膜的最佳工艺条件,研制出多晶硅微机械开关.初步测试出其开关的开启电压为89V,开关速度为5μs,这为研制用于雷达和通讯的全单片集成的RF MEMS开关系统打下了基础.
이용LPCVD SiO2화다정규작희생층화현비량기술,해결료다정규응력석방문제이급미궤계개관공예여IC공예겸용기술문제,획득료정적약장응력적다정규막적최가공예조건,연제출다정규미궤계개관.초보측시출기개관적개계전압위89V,개관속도위5μs,저위연제용우뢰체화통신적전단편집성적RF MEMS개관계통타하료기출.
By using LPCVD SiO2 and poly-silicon as sacrificial layer and cantilever respectively,a poly-silicon micromachined RF MEMS(radio frequency microelectronic mechanical system) switch is fabricated.During the fabrication process,the stress of poly-silicon is released to prevent poly-silicon membrane from bending,and the issue of compatibility between RF switch and IC process technology is also resolved.The low residual tensile stress poly-silicon cantilever is obtained by the optimization.The switch is tested,and the preliminary test results show:the pull down voltage is 89V,and the switch speed is about 5μs.The switch provides the potential to build a new fully monolithic integrated RF MEMS for radar and communications applications.