CAJ | 학술논문

采用溶胶-凝胶法在Si(001)基片上制备了CoFe_2O_4(CFO)薄膜,对样品进行不同温度的快速退火处理,并采用X射线衍射(XRD)、原子力显微镜(AFM)、振动样品磁强计(VSM)对薄膜进行微结构与磁性能分析.结果表明,薄膜退火温度在450℃及以上时生成无择尤取向的单一尖晶石相.随着退火温度上升,薄膜的晶化程度增高,Ms增大.650℃左右退火薄膜晶粒达到单畴临界尺寸,导致Hc随着退火温度的继续上升而逐渐下降.EDS分析表明,成膜后的化学计量比偏移很小.
채용용효-응효법재Si(001)기편상제비료CoFe_2O_4(CFO)박막,대양품진행불동온도적쾌속퇴화처리,병채용X사선연사(XRD)、원자력현미경(AFM)、진동양품자강계(VSM)대박막진행미결구여자성능분석.결과표명,박막퇴화온도재450℃급이상시생성무택우취향적단일첨정석상.수착퇴화온도상승,박막적정화정도증고,Ms증대.650℃좌우퇴화박막정립체도단주림계척촌,도치Hc수착퇴화온도적계속상승이축점하강.EDS분석표명,성막후적화학계량비편이흔소.
CoFe_2O_4 (CFO) thin films were synthesized on Si (001) substrates by sol-gel method followed by short annealing at different temperatures.The microstructure and magnetic properties of the samples were analyzed and measured by XRD, AFM, VSM and EDS, respectively.The experiment results showed that the films annealed at and above 450℃ have only a single phase of the spinel structure without any preferred crystalline orientation.The crystallization degree and the Ms of the CFO thin films increase slowly with the increase of annealing temperature.The grain size achieves the single-domain critical size at about 650℃, which causes decrease in Hc with the rise of annealing temperature.The EDS analysis showed that the films have a very small deviation from stoichiometric composition..