CAJ | 학술논문

采用离子注入方法制作了一种新型平面共振隧穿二极管(RTD),通过离子注入将器件之间进行隔离,避免了传统台面型RTD中采用的台面刻蚀所带来的一些缺点,并且表现出良好的I-V特性,峰谷电流比为3.4.通过该方法制作的RTD将更有利于RTD的平面集成.
채용리자주입방법제작료일충신형평면공진수천이겁관(RTD),통과리자주입장기건지간진행격리,피면료전통태면형RTD중채용적태면각식소대래적일사결점,병차표현출량호적I-V특성,봉곡전류비위3.4.통과해방법제작적RTD장경유리우RTD적평면집성.
A new type of planar resonant tunneling diode(RTD) was fabricated by ion implantation. The devices were isolated by ion implantation so that many shortcomings caused in conventional mesa-etched RTD were avoided. The planar RTD shows good I-V propeties, and the peak-valley current ratio(PVCR) reaches 3.4. This method plays an important role in planar integration for RTD.