稀有金属材料与工程
稀有金屬材料與工程
희유금속재료여공정
RARE METAL MATERIALS AND ENGINEERNG
2009年
z2期
627-630
,共4页
廖家轩%潘笑风%王洪全%张佳%傅向军%田忠
廖傢軒%潘笑風%王洪全%張佳%傅嚮軍%田忠
료가헌%반소풍%왕홍전%장가%부향군%전충
改善的溶胶凝胶法%钛酸锶钡薄膜%晶化%介电性能
改善的溶膠凝膠法%鈦痠鍶鋇薄膜%晶化%介電性能
개선적용효응효법%태산송패박막%정화%개전성능
improved sol-gel method%barium strontium titanate film%crystallization%dielectric properties
用改善的溶胶凝胶(Sol-Gel)法制备了钛酸锶钡(Ba_0.6Sr_0.4TiO_3, BST)薄膜,研究了退火温度对薄膜晶化及介电性能的影响.X射线衍射表明,由于薄膜较薄,各温度下衍射峰强度均微弱,但呈(110)择优取向,随温度的升高峰强度逐渐增加,也出现其他晶向的衍射峰.扫描电镜和原子力显微镜表明,改善的BST薄膜表面形貌光滑致密、无裂纹、无缩孔,随温度的升高薄膜晶化增强、晶粒逐渐长大、粗糙度增加.40 V外加电压下的介电性能大幅度提高,介电调谐率大于30%,介电损耗约0.02,其中,650 ℃对应介电调谐率45.1%和介电损耗0.0187.同时,就有关结构、介电性能及退火温度的关系进行了讨论.
用改善的溶膠凝膠(Sol-Gel)法製備瞭鈦痠鍶鋇(Ba_0.6Sr_0.4TiO_3, BST)薄膜,研究瞭退火溫度對薄膜晶化及介電性能的影響.X射線衍射錶明,由于薄膜較薄,各溫度下衍射峰彊度均微弱,但呈(110)擇優取嚮,隨溫度的升高峰彊度逐漸增加,也齣現其他晶嚮的衍射峰.掃描電鏡和原子力顯微鏡錶明,改善的BST薄膜錶麵形貌光滑緻密、無裂紋、無縮孔,隨溫度的升高薄膜晶化增彊、晶粒逐漸長大、粗糙度增加.40 V外加電壓下的介電性能大幅度提高,介電調諧率大于30%,介電損耗約0.02,其中,650 ℃對應介電調諧率45.1%和介電損耗0.0187.同時,就有關結構、介電性能及退火溫度的關繫進行瞭討論.
용개선적용효응효(Sol-Gel)법제비료태산송패(Ba_0.6Sr_0.4TiO_3, BST)박막,연구료퇴화온도대박막정화급개전성능적영향.X사선연사표명,유우박막교박,각온도하연사봉강도균미약,단정(110)택우취향,수온도적승고봉강도축점증가,야출현기타정향적연사봉.소묘전경화원자력현미경표명,개선적BST박막표면형모광활치밀、무렬문、무축공,수온도적승고박막정화증강、정립축점장대、조조도증가.40 V외가전압하적개전성능대폭도제고,개전조해솔대우30%,개전손모약0.02,기중,650 ℃대응개전조해솔45.1%화개전손모0.0187.동시,취유관결구、개전성능급퇴화온도적관계진행료토론.
Ba_0.6Sr_0.4TiO_3 (BST) films were prepared by improved Sol-gel method, and the effect of annealing temperature on the crystallization and the dielectric properties of the BST films was studied. X-ray diffraction shows that the BST films exhibit weak diffraction peak intensities because the films were quite thin. From 600 to 750, 600 ℃ corresponds to the weakest (110) orientation peak intensity. As the annealing temperature increases, the (110) peak intensity gradually increases, and the other diffraction peaks also appear. Scanning electron microscope presents that the BST films, which are smooth and compact with no crack or shrinkage cavity, display improved surface morphologies. With the increasing annealing temperature the crystallization of the BST films enhances with increasing crystal size and roughness. These morphologies are also confirmed by atomic force microscope. Meanwhile, the BST films illustrate significantly improved dielectric properties with more than 30% dielectric tunability at 40 V and less than 0.02 dielectric loss (tand) at zero bias. The dielectric properties are strongly dependent on the annealing temperature. 650 ℃ corresponds to the optimum dielectric property with the highest dielectric tenability of 45.1% and the lowest dielectric loss of 0.0187. Also, the correlative mechanism among film structure, dielectric properties and annealing temperature is discussed.