CAJ | 학술논문

采用RF溅射制备出Ba_(0.65)Sr_(0.35)TiO_3薄膜,剥离法制备出UFPA器件单元所需的图形化金属电极,TMAH溶液进行体硅腐蚀,并且使用保护胶和独特的夹具保护硅片正面免受腐蚀液的腐蚀.总结了一套制作微桥的简便可行的工艺流程,并最终在厚度为300μm的硅基片上成功的制备了厚度小于3 μm的面积为100 μm×100 μm的微桥单元结构.该微桥单元可以满足制备热释电薄膜单片式UFPA器件的要求.
채용RF천사제비출Ba_(0.65)Sr_(0.35)TiO_3박막,박리법제비출UFPA기건단원소수적도형화금속전겁,TMAH용액진행체규부식,병차사용보호효화독특적협구보호규편정면면수부식액적부식.총결료일투제작미교적간편가행적공예류정,병최종재후도위300μm적규기편상성공적제비료후도소우3 μm적면적위100 μm×100 μm적미교단원결구.해미교단원가이만족제비열석전박막단편식UFPA기건적요구.
We prepared Ba_(0.65)Sr_(0.35)TiO_3 thin films by RF sputtering,made the graphical metal electrode for UFPA device pixel by lift-off technique;etched the monocrystalline silicon by TMAH solution.And the micro-patterns of the front side are protected effectively without being etching by the series protective glues and unique fixture.A feasible simple procedure for making micro-bridge was summarized,and eventually obtain 100 μm×100μm area,less than 5μm thick micro-bridge fabrication on a 300μm in thickness silicon chip.Preparation of the micro-bridge fabrication to meet the pyroelectric thin film UFPA device requirements.