CAJ | 학술논문

以正向电压为自变量,以正向电流的对数为应变量,以温度为参数得到的p-n结的I-V-(T)特性曲线在第一象限中近似汇聚于一点.汇聚点对应的电压近似等于半导体材料的禁带宽度.汇聚点可以用来获取任意温度下的I-V特性曲线.
이정향전압위자변량,이정향전류적대수위응변량,이온도위삼수득도적p-n결적I-V-(T)특성곡선재제일상한중근사회취우일점.회취점대응적전압근사등우반도체재료적금대관도.회취점가이용래획취임의온도하적I-V특성곡선.
The I-V-(T) characteristic curves of p-n junctions with the forward voltage as the independent variable, the logarithm of forward current as the dependent variable, and the junction temperature as the parameter, almost converge at one point in the first quadrant. The voltage corresponding with the convergence point nearly equals the bandgap of the semiconductor material. This convergence point can be used to obtain the I-V characteristic curve at any temperature.