CAJ | 학술논문

利用等离子体辅助分子束外延在P型砷化镓衬底上制备了ZnO异质结发光二极管.实验表明:GaAs与ZnO之间的氧化镜绝缘层能够有效改善器件光电性能 I-V特性的研究表明该器件具有良好的整流特性,开启电压为3 V,电致发光光谱由一个紫外发光峰和一个可见发光带构成,其来源分别为ZnO层中近带边缺陷以及深能级缺陷相关的辐射复合.
이용등리자체보조분자속외연재P형신화가츤저상제비료ZnO이질결발광이겁관.실험표명:GaAs여ZnO지간적양화경절연층능구유효개선기건광전성능 I-V특성적연구표명해기건구유량호적정류특성,개계전압위3 V,전치발광광보유일개자외발광봉화일개가견발광대구성,기래원분별위ZnO층중근대변결함이급심능급결함상관적복사복합.
ZnO-based heterojunction light-emitting diodes have been fabricated on p-type GaAs substrate by plasmaassisted molecular beam expitaxy. An electron-blocking MgO layer between thin ZnO film and p-GaAs substrate plays a key role in improving performance of the diodes, Comparing with the n-ZnO/p-GaAs heterojunction, the ZnO/MgO/p-GaAs beterojunction shows a typical diode characteristic with a forward threshold voltage of 3 V. Electroluminescence measurement indicates that the ZnO/MgO/p-GaAs heterojunction has a visible emission band attributed to the defect-related recombination in the ZnO layer and an ultraviolet emission peak.