CAJ | 학술논문

研究了一维光子晶体微腔结构对nc-Si/a-SiNz超晶格发射的调制.一维光子晶体微腔采用两种具有不同折射率的非化学组分非晶氮化硅的周期调制结构,腔中嵌入采用激光晶化方法制备的硅量子点阵列,从Raman谱和透射电子显微镜分析得到其尺寸约为3～4 nm.从光致发光谱上观察到明显的选模作用、明显变窄的发光峰以及约两个量级的发光强度的增强.微腔对硅量子点阵列发光的调制主要表现在两个方面:共振模式的增强和非共振模式的抑制.硅量子点中位于腔共振模式的辐射跃迁被增强,非共振模式的辐射跃迁被抑制,因此位于腔共振频率处的跃迁通道成为硅量子点中唯一的辐射跃迁通道,导致光致发光谱的窄化和强度的增强.因此,在提高硅材料发光效率方面,光子晶体微腔具有非常大的应用前景.
연구료일유광자정체미강결구대nc-Si/a-SiNz초정격발사적조제.일유광자정체미강채용량충구유불동절사솔적비화학조분비정담화규적주기조제결구,강중감입채용격광정화방법제비적규양자점진렬,종Raman보화투사전자현미경분석득도기척촌약위3～4 nm.종광치발광보상관찰도명현적선모작용、명현변착적발광봉이급약량개량급적발광강도적증강.미강대규양자점진렬발광적조제주요표현재량개방면:공진모식적증강화비공진모식적억제.규양자점중위우강공진모식적복사약천피증강,비공진모식적복사약천피억제,인차위우강공진빈솔처적약천통도성위규양자점중유일적복사약천통도,도치광치발광보적착화화강도적증강.인차,재제고규재료발광효솔방면,광자정체미강구유비상대적응용전경.
We fabricate a-Si/a-SiNz superlattices and a one-dimensional amorphous silicon nitride photonic crystal microcavity by plasma enhancement chemical vapor deposition (PECVD). To improve the light-emitting efficiency of the nc-Si/a-SiNz superlattices, which are made from a-Si/a-SiNz superlattices by laser annealing, an nc-Si quantum dot array is inserted into the photonic crystal microcavity. Raman spectroscopy and transmission electron microscopy analysis show that nc-Si with a size of 4nm,which is close to the designed thickness of the a-Si sublayers,is formed in the a-Si sublayers. Owing to microcavity effects,the PL peak of the nc-Si/a-SiNz superlattices embedded in the microcavity is strongly narrowed, and the intensity of the PL is enhanced by two orders of magnitude with respect to the emission of λ/2-thick nc-Si/a-SiNz superlattices. Light emission at a cavity-resonant frequency from the nc-Si/a-SiNz superlattices is enhanced while other frequencies are forbidden. This leads to the narrowing of the PL spectrum and enhancement of the intensity.