微电子学
微電子學
미전자학
MICROELECTRONICS
2009年
6期
811-814
,共4页
程知群%李进%傅开红%周云芳%徐胜军%张胜
程知群%李進%傅開紅%週雲芳%徐勝軍%張勝
정지군%리진%부개홍%주운방%서성군%장성
吉尔伯特混频器%电流注入%闪烁噪声%增益
吉爾伯特混頻器%電流註入%閃爍譟聲%增益
길이백특혼빈기%전류주입%섬삭조성%증익
Gilbert mixer%Current-inpouring%Flicker noise%Gain
设计了一种改进型电流注入混频器.通过在吉尔伯特混频器电路的本振开关管源极引入电感形成谐振电路,消除了开关管源极寄生电容的影响,降低了混频器电路的闪烁噪声,增大了混频器电路的增益.混频器电路的设计采用SMIC 0.35 μm CMOS 工艺库,本振功率为-3 dBm.仿真结果表明,与改进前的混频器电路相比,当本振功率为-3 dBm时,改进型电流注入混频器电路的增益提高了1.76 dB,IIP3提高2.1 dBm,噪声系数降低了0.5 dB.
設計瞭一種改進型電流註入混頻器.通過在吉爾伯特混頻器電路的本振開關管源極引入電感形成諧振電路,消除瞭開關管源極寄生電容的影響,降低瞭混頻器電路的閃爍譟聲,增大瞭混頻器電路的增益.混頻器電路的設計採用SMIC 0.35 μm CMOS 工藝庫,本振功率為-3 dBm.倣真結果錶明,與改進前的混頻器電路相比,噹本振功率為-3 dBm時,改進型電流註入混頻器電路的增益提高瞭1.76 dB,IIP3提高2.1 dBm,譟聲繫數降低瞭0.5 dB.
설계료일충개진형전류주입혼빈기.통과재길이백특혼빈기전로적본진개관관원겁인입전감형성해진전로,소제료개관관원겁기생전용적영향,강저료혼빈기전로적섬삭조성,증대료혼빈기전로적증익.혼빈기전로적설계채용SMIC 0.35 μm CMOS 공예고,본진공솔위-3 dBm.방진결과표명,여개진전적혼빈기전로상비,당본진공솔위-3 dBm시,개진형전류주입혼빈기전로적증익제고료1.76 dB,IIP3제고2.1 dBm,조성계수강저료0.5 dB.
An improved current-inpouring CMOS mixer was designed.The conversion gain of the mixer was increased and the flicker noise was reduced by inserting an inductor at the source of LO switch transistors in Gilbert mixer to form a resonant circuit, which eliminated effects of parasitic capacitors.Designed with SMIC's 0.35 μm CMOS process, the mixer has an LO power of -3 dBm.Simulation results showed that, for an LO power of -3 dBm, the proposed mixer had a 1.76 dB increase in conversion gain, a 2.1 dBm improvement in IIP3, and 0.5 dB reduction in noise figure, compared with the mixer before modification.