高电压技术
高電壓技術
고전압기술
HIGH VOLTAGE ENGINEERING
2012年
2期
322-327
,共6页
陈秀娟%陈维江%沈海滨%贺子鸣%李国富%葛栋
陳秀娟%陳維江%瀋海濱%賀子鳴%李國富%葛棟
진수연%진유강%침해빈%하자명%리국부%갈동
可控金属氧化物避雷器(CMOA)%晶闸管阀%电压上升率%电流上升率%断开状态%导通状态
可控金屬氧化物避雷器(CMOA)%晶閘管閥%電壓上升率%電流上升率%斷開狀態%導通狀態
가공금속양화물피뢰기(CMOA)%정갑관벌%전압상승솔%전류상승솔%단개상태%도통상태
controllable metal oxide arrester(CMOA)%thyristor valve%voltage rise rate%current rise rate%off-state%on-state
晶闸管器件的断态(开断状态)电压上升率du/dt和通态(导通状态)电流上升率di/dt是决定可控金属氧化物避雷器(CMOA)晶闸管阀工作安全性的关键参数。以长治—南阳—荆门特高压交流试验示范工程为背景,对晶闸管阀中晶闸管器件需要承受的最大du/dt和di/dt进行了仿真计算,提出了技术要求,并给出了限值要求,即du/dt和di/dt均不允许超过其临界值du/dtcrit和di/dtcrit。根据实际使用条件对所选晶闸管器件的du/dtcrit和di/dtcrit进行了试验测试。测试结果和技术要求对比表明:2.0~3.0英寸晶闸管du/dtcrit不小于45kV/μs,大于技术要求28.3kV/μs,无需限制措施;di/dtcrit为865~910A/μs,远小于技术要求87kA/μs,须采取适当的限制措施。研究表明,采用3~5mH的限流电抗器可以将di/dt限制在容许范围内,且限流电抗器对CMOA限制系统操作过电压的效果影响不大,可以采用限流电抗器限制晶闸管器件的di/dt。
晶閘管器件的斷態(開斷狀態)電壓上升率du/dt和通態(導通狀態)電流上升率di/dt是決定可控金屬氧化物避雷器(CMOA)晶閘管閥工作安全性的關鍵參數。以長治—南暘—荊門特高壓交流試驗示範工程為揹景,對晶閘管閥中晶閘管器件需要承受的最大du/dt和di/dt進行瞭倣真計算,提齣瞭技術要求,併給齣瞭限值要求,即du/dt和di/dt均不允許超過其臨界值du/dtcrit和di/dtcrit。根據實際使用條件對所選晶閘管器件的du/dtcrit和di/dtcrit進行瞭試驗測試。測試結果和技術要求對比錶明:2.0~3.0英吋晶閘管du/dtcrit不小于45kV/μs,大于技術要求28.3kV/μs,無需限製措施;di/dtcrit為865~910A/μs,遠小于技術要求87kA/μs,鬚採取適噹的限製措施。研究錶明,採用3~5mH的限流電抗器可以將di/dt限製在容許範圍內,且限流電抗器對CMOA限製繫統操作過電壓的效果影響不大,可以採用限流電抗器限製晶閘管器件的di/dt。
정갑관기건적단태(개단상태)전압상승솔du/dt화통태(도통상태)전류상승솔di/dt시결정가공금속양화물피뢰기(CMOA)정갑관벌공작안전성적관건삼수。이장치—남양—형문특고압교류시험시범공정위배경,대정갑관벌중정갑관기건수요승수적최대du/dt화di/dt진행료방진계산,제출료기술요구,병급출료한치요구,즉du/dt화di/dt균불윤허초과기림계치du/dtcrit화di/dtcrit。근거실제사용조건대소선정갑관기건적du/dtcrit화di/dtcrit진행료시험측시。측시결과화기술요구대비표명:2.0~3.0영촌정갑관du/dtcrit불소우45kV/μs,대우기술요구28.3kV/μs,무수한제조시;di/dtcrit위865~910A/μs,원소우기술요구87kA/μs,수채취괄당적한제조시。연구표명,채용3~5mH적한류전항기가이장di/dt한제재용허범위내,차한류전항기대CMOA한제계통조작과전압적효과영향불대,가이채용한류전항기한제정갑관기건적di/dt。
The du/dt(voltage rise rate in off-state of thyristor) and di/dt(current rise rate in on-state of thyristor) are key parameters that determine working security of thyristor valve of the controllable metal oxide surge arrester(CMOA).Taking the Changzhi via Nanyang to Jingmen UHV AC experimental project of China as an example,we simulated the maximal values of du/dt and di/dt of thyristor,and put forward technical requirements that du/dt and di/dt values were not allowed to exceed their critical values du/dtcrit and di/dtcrit.The maximal du/dt was 28.3 kV/μs and the maximal di/dt was 87 kA/μs.The du/dtcrit and di/dtcrit were tested by actual application condition.Comparing test results with technical requirements indicates that the maximal withstand capacity of du/dtcrit of 2.0 to 3.0 inch thyristor is not less than 45 kV/μs,and the maximal withstand capacity of di/dtcrit is between 865 A/μs and 910 A/μs which is much less than the required 87 kA/μs.Moreover,the di/dt value is often limited by a current limited reactor,and the reactor may affect limitation effect of CMOA on switching overvoltage,so appropriate values of reactor should be selected.The results indicate that,when the reactor value is between 3 and 5 mH,the current limited reactor has little influence on CMOA limiting effect.