CAJ | 학술논문

介绍了干氧和氢氧合成两种不同栅氧化方式下制作的N沟输入CMOS运算放大器电路的电离辐照响应特征.并通过对电路内部单管特性损伤分析的比较，探讨了引起两者辐照敏感性差异的原因.结果显示，氢氧合成工艺比干氧工艺损伤明显的原因，是因为H的引入产生了更多的界面态，从而使其单管的跨导明显下降所致.这表明，抑制辐照感生氧化物电荷尤其是界面态的增长，对提高电路的抗辐射特性至关重要.
개소료간양화경양합성량충불동책양화방식하제작적N구수입CMOS운산방대기전로적전리복조향응특정.병통과대전로내부단관특성손상분석적비교，탐토료인기량자복조민감성차이적원인.결과현시，경양합성공예비간양공예손상명현적원인，시인위H적인입산생료경다적계면태，종이사기단관적과도명현하강소치.저표명，억제복조감생양화물전하우기시계면태적증장，대제고전로적항복사특성지관중요.
The total dose effects of two types of CMOS op-amps whose transistor gates are produced with dry O2 and H2+O2 process,respectively，have been investigated.Comparing the radiation effects between the two circuits and their inner transistors,the causes of the difference between the two amplifiers' sensitivity to the irradiation is explored.It is shown that owing to the introduction of H in the process of gate oxide growing,more interface states are introduced in the irradiation,as makes the transconductance of H2+O2 device have much more degradation in the irradiation than the dry O2 device.A conclusion is drawn that more attention should be paid to the way of gate oxide growing,which is one of the key factors influencing the performance of op-amplifiers in the total dose radiation environment.