CAJ | 학술논문

通过局域注氧工艺,在同一管芯上制作了DSOI、体硅和SOI三种结构的器件.通过测量和模拟比较了这三种结构器件的热特性.模拟和测量的结果证明DSOI器件与SOI器件相比,具有衬底热阻较低的优点,因而DSOI器件在保持SOI器件电学特性优势的同时消除了SOI器件严重的自热效应.DSOI器件的衬底热阻和体硅器件非常接近,并且在进入到深亚微米领域以后能够继续保持这一优势.
통과국역주양공예,재동일관심상제작료DSOI、체규화SOI삼충결구적기건.통과측량화모의비교료저삼충결구기건적열특성.모의화측량적결과증명DSOI기건여SOI기건상비,구유츤저열조교저적우점,인이DSOI기건재보지SOI기건전학특성우세적동시소제료SOI기건엄중적자열효응.DSOI기건적츤저열조화체규기건비상접근,병차재진입도심아미미영역이후능구계속보지저일우세.
DSOI,bulk-Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.The thermal properties of the three kinds of devices are described and compared from simulation and measurement.Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self-heating effect than their SOI counterparts. At the same time,the electrical advantages of SOI devices can stay.The thermal resistance of DSOI devices is very close to that of bulk devices and DSOI devices can keep this advantage into deep sub-micron realm.