半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2008年
5期
863-868
,共6页
应变硅%电子迁移率%解析模型%n型场效应管%单轴应力/应变
應變硅%電子遷移率%解析模型%n型場效應管%單軸應力/應變
응변규%전자천이솔%해석모형%n형장효응관%단축응력/응변
Strained-Si%electron mobility%analytical model%nMOSFET%uniaxial stress/strain
提出了一个应变硅沟道电子迁移率解析模型.模型以应变张量为对象研究应变硅沟道电子迁移率,因此与工艺相独立;适用于施加双轴应力及<100>/<110>方向单轴应力,沟道方向为<100>/<110>的器件;易于嵌入常用仿真工具中.
提齣瞭一箇應變硅溝道電子遷移率解析模型.模型以應變張量為對象研究應變硅溝道電子遷移率,因此與工藝相獨立;適用于施加雙軸應力及<100>/<110>方嚮單軸應力,溝道方嚮為<100>/<110>的器件;易于嵌入常用倣真工具中.
제출료일개응변규구도전자천이솔해석모형.모형이응변장량위대상연구응변규구도전자천이솔,인차여공예상독립;괄용우시가쌍축응력급<100>/<110>방향단축응력,구도방향위<100>/<110>적기건;역우감입상용방진공구중.
An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper. Themodel deals directly with the strain tensor, and thus is independent of the manufacturing process. It is suitable for <100>/<110> channel nMOSFETs under biaxial or <100>/<110> uniaxial stress and can be implemented in conventional devicesimulation tools.
