CAJ | 학술논문

用高频溅射法在P型硅衬底上生长了纳米硅薄膜,衬底温度控制在95℃左右,工作气体选用H2+Ar,氢气的分压控制在31%到70%,同时改变薄膜的沉积时间.Tauc曲线显示出用射频溅射法制备的薄膜是一种宽带隙材料.结合实验数据,在HQD理论基础上,给出了这种薄膜的能带结构图,并在理论和实验上分别对薄膜的Ⅰ-Ⅴ特性进行了研究.
용고빈천사법재P형규츤저상생장료납미규박막,츤저온도공제재95℃좌우,공작기체선용H2+Ar,경기적분압공제재31%도70%,동시개변박막적침적시간.Tauc곡선현시출용사빈천사법제비적박막시일충관대극재료.결합실험수거,재HQD이론기출상,급출료저충박막적능대결구도,병재이론화실험상분별대박막적Ⅰ-Ⅴ특성진행료연구.
Nanocrystalline silicon thin films were deposited by radio frequency(RF) sputtering on p -type silicon substrates at low temperature (95℃). In the working gas (H2+ Ar),the H2 dilution percentage was varied from 31% to 70%. The duration time of film deposition was changed at the same time. The optical band gaps( Egopt) were derived from Tauc plots,and the result showed that the films prepared by RF - sputtering has a wider band - gap. Basing on our experimental results and the heterojunction quan-tum dot (HQD) theory,a new modified band gap model of the ne - Si :H film was suggested. The Ⅰ-Ⅴ characteristics about the nc - Si:H film were discussed theoretically and experimentally.