半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2009年
11期
1118-1121,1126
,共5页
黄璐%张万荣%谢红云%沈珮%黄毅文%胡宁
黃璐%張萬榮%謝紅雲%瀋珮%黃毅文%鬍寧
황로%장만영%사홍운%침패%황의문%호저
低噪声放大器%超宽带%宽带匹配%群延时
低譟聲放大器%超寬帶%寬帶匹配%群延時
저조성방대기%초관대%관대필배%군연시
low noise amplifier (LNA)%uhra-wideband (UWB)%wideband matching%group delay
选用SiGe HBT作为电路的有源器件,利用基极串联电感L_B与反馈支路、晶体管Miller效应所产生的寄生电容形成的T型匹配网络取得了输入阻抗的良好匹配,并就基极串联电感值对系统群延时的影响进行了讨论,优化L_B以满足兼容群延时与宽带匹配的要求.该放大器在3.1~10.6 GHz的带宽内增益达到12.7 dB,增益变化小于等于1.8 dB,噪声小于3.85 dB,群延时小于24 ps,静态功耗仅为6.3 mW.
選用SiGe HBT作為電路的有源器件,利用基極串聯電感L_B與反饋支路、晶體管Miller效應所產生的寄生電容形成的T型匹配網絡取得瞭輸入阻抗的良好匹配,併就基極串聯電感值對繫統群延時的影響進行瞭討論,優化L_B以滿足兼容群延時與寬帶匹配的要求.該放大器在3.1~10.6 GHz的帶寬內增益達到12.7 dB,增益變化小于等于1.8 dB,譟聲小于3.85 dB,群延時小于24 ps,靜態功耗僅為6.3 mW.
선용SiGe HBT작위전로적유원기건,이용기겁천련전감L_B여반궤지로、정체관Miller효응소산생적기생전용형성적T형필배망락취득료수입조항적량호필배,병취기겁천련전감치대계통군연시적영향진행료토론,우화L_B이만족겸용군연시여관대필배적요구.해방대기재3.1~10.6 GHz적대관내증익체도12.7 dB,증익변화소우등우1.8 dB,조성소우3.85 dB,군연시소우24 ps,정태공모부위6.3 mW.
A resistive-feedback UWB LNA (ultra-wideband low noise amplifier) was presented. SiGe HBT was adopted as the active device of this LNA. A novel methodology was proposed to match the input impedance of this LNA with advantage of T-type matching network constituted of the serial inductance at the base, feedback loop and Miller capacitors. Meanwhile, the effect of the serial inductance on the group delay of this LNA was discussed for optimizing LB. The simulation results indicate the gain of LNA reaches as high as 12.7 dB with the variation of 1.8 dB, NF is less than 3.85 dB, group delay is less than 24 ps from 3.1 to 10.6 GHz and the power consuming is only 6.3 mW.