CAJ | 학술논문

利用热丝化学气相沉积(HFCVD)方法在Si衬底上生长了4μm厚的金刚石膜,然后利用射频磁控溅射方法在金刚石膜上沉积了100nm厚的六角氮化硼(h-BN)薄膜.在超高真空系统中测试了覆盖氮化硼(BN)薄膜前后金刚石膜的场发射特性,结果表明覆盖BN薄膜后的金刚石膜的场发射特性明显提高,开启电场由14V/μm上升到8V/μm.F-N曲线表明,覆盖BN薄膜后的金刚石膜在强电场区域的场增强因子有所降低,这可能归因于场发射点随着电场的增强而改变.
이용열사화학기상침적(HFCVD)방법재Si츤저상생장료4μm후적금강석막,연후이용사빈자공천사방법재금강석막상침적료100nm후적륙각담화붕(h-BN)박막.재초고진공계통중측시료복개담화붕(BN)박막전후금강석막적장발사특성,결과표명복개BN박막후적금강석막적장발사특성명현제고,개계전장유14V/μm상승도8V/μm.F-N곡선표명,복개BN박막후적금강석막재강전장구역적장증강인자유소강저,저가능귀인우장발사점수착전장적증강이개변.
4μm diamond films were deposited on Si by hot filament chemical vapor deposition(HFCVD), then a 100nm hexangular boron nitride(h-BN) thin films were prepared on diamond films by RF magnetron sputtering physical vapor deposition. The field emission characteristics of diamond films were tested in an ultrahigh vacuum system(<10-7Pa). The field emission characteristics of the diamond films coated with the h-BN thin films were improved clearly, and the threshold field decreased from 14V/μm to 8V/μm. The Fowler-Nordheim(F-N) plots showed that the field enhancement factor decreased in the high electric field region, it could be attributed to the change of field emission sites.