电镀与涂饰
電鍍與塗飾
전도여도식
ELECTROPLATING & FINISHING
2010年
2期
30-32
,共3页
化学镀铜%四羟丙基乙二胺%二价铜%配合物%阴极还原%循环伏安法
化學鍍銅%四羥丙基乙二胺%二價銅%配閤物%陰極還原%循環伏安法
화학도동%사간병기을이알%이개동%배합물%음겁환원%순배복안법
electroless copper plating%N,N,N,N -tetrakis(2-hydroxypropyl)ethylenediamine%copper(Ⅱ)%complex%cathodic reduction%cyclic voltammetry
采用循环迭代法研究了以四羟丙基乙二胺(THPED)为配位剂的化学镀铜溶液中Cu(Ⅱ)的主要存在形式.通过循环伏安法,研究了Cu(Ⅱ)的阴极还原反应.研究表明:THPED(以T表示)与Cu(Ⅱ)形成的配合物主要是CuT(OH)_2和CuT_2(OH)_2其浓度分别占总Cu(Ⅱ)浓度的56%和42%.CuT(OH)_2和CuT_2(OH)_2分别在电位-0.7V和-1.2 V左右(均相对于饱和甘汞电极)发生如下不可逆的电化学还原:CuT(OH)_2+2~e-→Cu+T+20H~-和CuT_2(OH)_2+2e~-→Cu+2T+2OH~-.
採用循環迭代法研究瞭以四羥丙基乙二胺(THPED)為配位劑的化學鍍銅溶液中Cu(Ⅱ)的主要存在形式.通過循環伏安法,研究瞭Cu(Ⅱ)的陰極還原反應.研究錶明:THPED(以T錶示)與Cu(Ⅱ)形成的配閤物主要是CuT(OH)_2和CuT_2(OH)_2其濃度分彆佔總Cu(Ⅱ)濃度的56%和42%.CuT(OH)_2和CuT_2(OH)_2分彆在電位-0.7V和-1.2 V左右(均相對于飽和甘汞電極)髮生如下不可逆的電化學還原:CuT(OH)_2+2~e-→Cu+T+20H~-和CuT_2(OH)_2+2e~-→Cu+2T+2OH~-.
채용순배질대법연구료이사간병기을이알(THPED)위배위제적화학도동용액중Cu(Ⅱ)적주요존재형식.통과순배복안법,연구료Cu(Ⅱ)적음겁환원반응.연구표명:THPED(이T표시)여Cu(Ⅱ)형성적배합물주요시CuT(OH)_2화CuT_2(OH)_2기농도분별점총Cu(Ⅱ)농도적56%화42%.CuT(OH)_2화CuT_2(OH)_2분별재전위-0.7V화-1.2 V좌우(균상대우포화감홍전겁)발생여하불가역적전화학환원:CuT(OH)_2+2~e-→Cu+T+20H~-화CuT_2(OH)_2+2e~-→Cu+2T+2OH~-.
The main existing form of Cu(Ⅱ) in an electroless copper plating bath with N, N, N', N'-tetrakis (2-hydroxypropyl)ethylenediamine (THPED) as complexing agent and the cathodic reduction reaction of Cu(Ⅱ) were studied by cyclic iterative method and cyclic voltammetry, respectively. The results showed that the main complexes in the bath are CuT(OH)_2 and CuT_2(OH)_2, and their concentrations are 56% and 42% respectively of the total Cu(Ⅱ) amount. The irreversible electrochemical reduction of CuT(OH)_2 and CuT_2(OH)_2 occurring respectively at -0.7 V and -1.2 V (versus saturated calomel electrode) can be expressed as follows: CuT(OH)_2 + 2e~-→ Cu +T+ 2OH~- and CuT_2(OH)_2+ 2e~-→Cu + 2T + 20H~-.
