电镀与涂饰
電鍍與塗飾
전도여도식
ELECTROPLATING & FINISHING
2009年
7期
63-66,71
,共5页
王子生%胡秀坤%吴琼%徐美华
王子生%鬍秀坤%吳瓊%徐美華
왕자생%호수곤%오경%서미화
磁铁矿%掺银%非本征磁电阻效应%室温%单畴%溶胶-凝胶法
磁鐵礦%摻銀%非本徵磁電阻效應%室溫%單疇%溶膠-凝膠法
자철광%참은%비본정자전조효응%실온%단주%용효-응효법
magnetite%silver doping%extrinsic magneto-resistance effect%room temperature%single domain%sol-gel method
采用溶胶-凝胶技术结合旋涂法,以聚乙烯醇作为鳌合剂,选择适当的退火程序,制备了由金属Ag相和Fe3O4相所组成的Agx(Fe3O4)1-x=0,0.1,0.2,0.3)复合薄膜.磁力显微镜观察表明,Fe3O4晶粒为单畴颗粒,其直径为75~85 nm,小于理论计算的单畴,临界尺寸.磁性测量表明:x=0.1和0.3薄膜的矫顽力坼分别为23.1 kA/m和28.6 kA/m,很接近于Fe3O4的磁晶各向异性场HK(27.1 KA/m).室温(300K)下,x=0.1的薄膜具有最大的磁电阻,700 kA/m磁场下为-3.5%,高于纯Fe3O4薄膜的低场磁电阻(-2.2%).随着Ag含量进一步增加,薄膜的室温磁电阻减小.适量金属Ag的掺入有利于提高Fe3O4薄膜的磁电阻,这归因于自旋极化电子在Fe3O4晶粒和Ag颗粒界面处的自旋相关散射以及穿过Fe3O4-Fe3P4晶界的自旋极化隧穿的共同作用.
採用溶膠-凝膠技術結閤鏇塗法,以聚乙烯醇作為鼇閤劑,選擇適噹的退火程序,製備瞭由金屬Ag相和Fe3O4相所組成的Agx(Fe3O4)1-x=0,0.1,0.2,0.3)複閤薄膜.磁力顯微鏡觀察錶明,Fe3O4晶粒為單疇顆粒,其直徑為75~85 nm,小于理論計算的單疇,臨界呎吋.磁性測量錶明:x=0.1和0.3薄膜的矯頑力坼分彆為23.1 kA/m和28.6 kA/m,很接近于Fe3O4的磁晶各嚮異性場HK(27.1 KA/m).室溫(300K)下,x=0.1的薄膜具有最大的磁電阻,700 kA/m磁場下為-3.5%,高于純Fe3O4薄膜的低場磁電阻(-2.2%).隨著Ag含量進一步增加,薄膜的室溫磁電阻減小.適量金屬Ag的摻入有利于提高Fe3O4薄膜的磁電阻,這歸因于自鏇極化電子在Fe3O4晶粒和Ag顆粒界麵處的自鏇相關散射以及穿過Fe3O4-Fe3P4晶界的自鏇極化隧穿的共同作用.
채용용효-응효기술결합선도법,이취을희순작위오합제,선택괄당적퇴화정서,제비료유금속Ag상화Fe3O4상소조성적Agx(Fe3O4)1-x=0,0.1,0.2,0.3)복합박막.자력현미경관찰표명,Fe3O4정립위단주과립,기직경위75~85 nm,소우이론계산적단주,림계척촌.자성측량표명:x=0.1화0.3박막적교완력탁분별위23.1 kA/m화28.6 kA/m,흔접근우Fe3O4적자정각향이성장HK(27.1 KA/m).실온(300K)하,x=0.1적박막구유최대적자전조,700 kA/m자장하위-3.5%,고우순Fe3O4박막적저장자전조(-2.2%).수착Ag함량진일보증가,박막적실온자전조감소.괄량금속Ag적참입유리우제고Fe3O4박막적자전조,저귀인우자선겁화전자재Fe3O4정립화Ag과립계면처적자선상관산사이급천과Fe3O4-Fe3P4정계적자선겁화수천적공동작용.
Agx(Fe3O4)1-x (x = 0, 0.1, 0.2 and 0.3) composite thin films consisting of a ferrimagnetic spinel Fe3O4 phase and a non-magnetic metal Ag phase were prepared by sol-gel method in combination with spin-coating technique. The microstructure observation of the thin films by magnetic force microscope indicated that the Fe3O4 grains are nearly spherical with a diameter ranging from 75 nm to 85 nm which is less than the theoretically calculated critical diameter of single-domain Fe3O4 particles. The coercivity of the films is about 23.1 kA/m for the thin film with x=0.1 and 28.6 kA/m for that with x = 0.3 respectively, which are nearly equal to the magnetocrystalline anisotropy field HK of Fe3O4 (namely 27.1 kA/m). At room temperature (300 K), the thin film with x = 0.1 has a maximal magnetoresistance of-3.5% under a magnetic field of 700 kA/m, which is higher than that (-2.2%) of a pure Fe3O4 film. The magnetoresistance is decreased with further increasing Ag content. Therefore, an appropriate addition of Ag is favorable for the enhancement of the room-temperature magnetoresistance of Fe3O4 thin film, which can be attributed to the combined effect of the spin-dependent scattering at the interfaces between Fe3O4 grains and Ag granules as well as the spin-polarized tunneling at boundaries between Fe3O4 grains of spin-polarized electrons.