固体电子学研究与进展
固體電子學研究與進展
고체전자학연구여진전
RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS
2009年
4期
621-625
,共5页
王德君%王槿%陈素华%朱巧智%秦福文
王德君%王槿%陳素華%硃巧智%秦福文
왕덕군%왕근%진소화%주교지%진복문
碳化硅%碳化钛%电子回旋共振氢等离子体%欧姆接触%比接触电阻
碳化硅%碳化鈦%電子迴鏇共振氫等離子體%歐姆接觸%比接觸電阻
탄화규%탄화태%전자회선공진경등리자체%구모접촉%비접촉전조
SiC%TiC%electronic cyclotron resonance hydrogen plasma%ohmic contact%specific contact resistivity
利用电子回旋共振(ECR)氢等离子体处理n型4H-SiC(0.5~1.5×10~(19)cm~(-3))表面,采用溅射法制备碳化钛(TiC)电极,并在低温(<800℃)条件下退火.直线传输线模型(TLM)测试结果表明,TiC电极无需退火即可与SiC形成欧姆接触,采用ECR氢等离子体处理能明显降低比接触电阻,并在600℃退火时获得了最小的比接触电阻2.45×10~(-6)Ω·cm~2;当退火温度超过600℃时,欧姆接触性能开始退化,但是比接触电阻仍然低于未经氢等离子体处理的样品,说明ECR氢等离子体处理对防止高温欧姆接触性能劣化仍有明显的效果.利用X射线衍射(XRD)分析了不同退火温度下TiC/SiC界面的物相组成,揭示了电学特性与微观结构的关系.
利用電子迴鏇共振(ECR)氫等離子體處理n型4H-SiC(0.5~1.5×10~(19)cm~(-3))錶麵,採用濺射法製備碳化鈦(TiC)電極,併在低溫(<800℃)條件下退火.直線傳輸線模型(TLM)測試結果錶明,TiC電極無需退火即可與SiC形成歐姆接觸,採用ECR氫等離子體處理能明顯降低比接觸電阻,併在600℃退火時穫得瞭最小的比接觸電阻2.45×10~(-6)Ω·cm~2;噹退火溫度超過600℃時,歐姆接觸性能開始退化,但是比接觸電阻仍然低于未經氫等離子體處理的樣品,說明ECR氫等離子體處理對防止高溫歐姆接觸性能劣化仍有明顯的效果.利用X射線衍射(XRD)分析瞭不同退火溫度下TiC/SiC界麵的物相組成,揭示瞭電學特性與微觀結構的關繫.
이용전자회선공진(ECR)경등리자체처리n형4H-SiC(0.5~1.5×10~(19)cm~(-3))표면,채용천사법제비탄화태(TiC)전겁,병재저온(<800℃)조건하퇴화.직선전수선모형(TLM)측시결과표명,TiC전겁무수퇴화즉가여SiC형성구모접촉,채용ECR경등리자체처리능명현강저비접촉전조,병재600℃퇴화시획득료최소적비접촉전조2.45×10~(-6)Ω·cm~2;당퇴화온도초과600℃시,구모접촉성능개시퇴화,단시비접촉전조잉연저우미경경등리자체처리적양품,설명ECR경등리자체처리대방지고온구모접촉성능열화잉유명현적효과.이용X사선연사(XRD)분석료불동퇴화온도하TiC/SiC계면적물상조성,게시료전학특성여미관결구적관계.
The surface of highly doped n-type(0.5~1.5×10~(19)cm~(-3)) 4H-SiC was treated by electronic cyclotron resonance(ECR) hydrogen plasma. TiC electrodes were fabricated by sputtering and low temperature(<800℃) annealing process. The results of TLM measurement indicated that TiC electrodes showed ohmic behavior without annealing and the treatment of ECR hydrogen plasma decreased the annealing temperature effectively. The lowest contact resistivity 2.45×10~(-6)Ω·cm~2 was obtained after annealing at 600℃. After annealing above 600℃ the property of ohmic contact started to degenerate, but the specific contact resistivity was still much lower than that of samples which weren't treated by hydrogen plasma. This phenomenon showed that ECR hydrogen plasma treatment had a significant effect on avoiding deterioration of ohmic contact under high temperature. To reveal the correlation between electrical properties and microstructures, XRD was used to determine the intermetallic compound formed at the TiC/4H-SiC interface at different annealing temperatures.