CAJ | 학술논문

在有效质量和有限高势垒近似下,变分研究了在双电子柱形GaN/Al0.2Ga0.8N量子点中掺入不同类型杂质时,杂质电子体系的基态能随杂质电荷、量子点的高度及杂质位置的变化规律。结果表明,随量子点高度增加,杂质电子体系的基态能单调递减;杂质带负电时,体系的基态能量都比较大,不易形成稳定的束缚态。随着杂质由量子点下界面沿z轴上移至上界面,对于类氢施主杂质,体系的基态能先减小后增大,在z0=1.0 nm处取得极小值;而受主杂质,变化趋势相反：体系的基态能先增大后减小,在z0=1.0 nm处取得极大值;若掺入中性杂质,杂质电子体系的基态能不变。
재유효질량화유한고세루근사하,변분연구료재쌍전자주형GaN/Al0.2Ga0.8N양자점중참입불동류형잡질시,잡질전자체계적기태능수잡질전하、양자점적고도급잡질위치적변화규률。결과표명,수양자점고도증가,잡질전자체계적기태능단조체감;잡질대부전시,체계적기태능량도비교대,불역형성은정적속박태。수착잡질유양자점하계면연z축상이지상계면,대우류경시주잡질,체계적기태능선감소후증대,재z0=1.0 nm처취득겁소치;이수주잡질,변화추세상반：체계적기태능선증대후감소,재z0=1.0 nm처취득겁대치;약참입중성잡질,잡질전자체계적기태능불변。
Within the effective-mass and finite potential barrier approximation,the ground-state energy of impurity to electron as functions of the charge of impurity,the quantum dot height and impurity position is investigated via a variational procedure when there are a different type of impurity in the cylindrical GaN/Al0.2Ga0.8N quantum dot（QD） with two electrons.Numerical results show that,when there is an impurity in the center of QD,the ground-state energy of impurity to electron reduces monotonously with increasing the QD height.While the charge of the impurity is negative,the impurity state becomes unstable.If there is a hydrogenic donor impurity in the QD the ground-state energy firstly reduces,and then increases with moving the hydrogenic donor impurity position from the bottom of QD to the top,there is a minimum at z0= 1.0 nm.But the status is opposite when there is an acceptor impurity in the QD,the ground-state energy firstly increases,and then decreases,there is a maximum at z0=1.0nm with moving the impurity position along the growth direction.When there is a neutral impurity in the QD,the ground-state energy of impurity to electron doesn＇t vary with impurity position.