量子电子学报
量子電子學報
양자전자학보
CHINESE JOURNAL OF QUANTUM ELECTRONICS
2000年
4期
365-368
,共4页
ECR-PECVD%Si3N4薄膜%表面平整度
ECR-PECVD%Si3N4薄膜%錶麵平整度
ECR-PECVD%Si3N4박막%표면평정도
ECR-PECVD%Si3N4 thin film%the surface roughness
本文利用偏心静电单探针诊断了反应室内的等离子体密度的空间分布；由Telystep-Hobbso轮廓仪研究了ECR-PECVD制备的Si3N4薄膜的表面特性．结果表明ECR-PECVD制备的氮化硅薄膜是一种表面均匀平整度好的薄膜．
本文利用偏心靜電單探針診斷瞭反應室內的等離子體密度的空間分佈；由Telystep-Hobbso輪廓儀研究瞭ECR-PECVD製備的Si3N4薄膜的錶麵特性．結果錶明ECR-PECVD製備的氮化硅薄膜是一種錶麵均勻平整度好的薄膜．
본문이용편심정전단탐침진단료반응실내적등리자체밀도적공간분포；유Telystep-Hobbso륜곽의연구료ECR-PECVD제비적Si3N4박막적표면특성．결과표명ECR-PECVD제비적담화규박막시일충표면균균평정도호적박막．
The spatial distribution of the ECR plasma density in the reaction chamber has been measured by using a eccentric langmuir probe. The surface roughness characteristic of Si3N4 thin film has been researched with the profilometer Telystep-Hobbson. The results show the surface of this kind of thin film made by ECR-PECVD technology is very smooth.
